Abstract
We have investigated the temperature-dependent electrical properties of the p-n junction formed between a p-type pentacene film and n-type SnO2 nanowires. Rectifying current-voltage characteristics were observed and analyzed by a series resistance and a diode model. As temperature decreased, forward current decreased fitting to the diode equation of I = I0[exp(η kT) - 1] with a large ideality factor reaching η ∼ 420, indicating large surface states at the junction parts. The activation energy of the series resistance from the Arrhenius plot was estimated to be 35.6 meV indicating the dominant contribution of the pentacene layer as a series resistance in the equivalent model.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 10 PART 1 |
| DOIs | |
| Publication status | Published - 2011 Oct 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Organic/inorganic hybrid p-n junctions made of pentacene-sno2 nanowires network. / Park, Sung Chan; Huh, Junghwan; Kim, Daeil; Yee, Seongmin; Kim, Gyu-Tae; Ha, Jeong Sook.
In: Japanese Journal of Applied Physics, Vol. 50, No. 10 PART 1, 01.10.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Organic/inorganic hybrid p-n junctions made of pentacene-sno2 nanowires network
AU - Park, Sung Chan
AU - Huh, Junghwan
AU - Kim, Daeil
AU - Yee, Seongmin
AU - Kim, Gyu-Tae
AU - Ha, Jeong Sook
PY - 2011/10/1
Y1 - 2011/10/1
N2 - We have investigated the temperature-dependent electrical properties of the p-n junction formed between a p-type pentacene film and n-type SnO2 nanowires. Rectifying current-voltage characteristics were observed and analyzed by a series resistance and a diode model. As temperature decreased, forward current decreased fitting to the diode equation of I = I0[exp(η kT) - 1] with a large ideality factor reaching η ∼ 420, indicating large surface states at the junction parts. The activation energy of the series resistance from the Arrhenius plot was estimated to be 35.6 meV indicating the dominant contribution of the pentacene layer as a series resistance in the equivalent model.
AB - We have investigated the temperature-dependent electrical properties of the p-n junction formed between a p-type pentacene film and n-type SnO2 nanowires. Rectifying current-voltage characteristics were observed and analyzed by a series resistance and a diode model. As temperature decreased, forward current decreased fitting to the diode equation of I = I0[exp(η kT) - 1] with a large ideality factor reaching η ∼ 420, indicating large surface states at the junction parts. The activation energy of the series resistance from the Arrhenius plot was estimated to be 35.6 meV indicating the dominant contribution of the pentacene layer as a series resistance in the equivalent model.
UR - http://www.scopus.com/inward/record.url?scp=80054932269&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80054932269&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.104001
DO - 10.1143/JJAP.50.104001
M3 - Article
AN - SCOPUS:80054932269
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10 PART 1
ER -