Organic/inorganic hybrid p-n junctions made of pentacene-sno2 nanowires network

Sung Chan Park; Junghwan Huh; Daeil Kim; Seongmin Yee; Gyu Tae Kim; Jeong Sook Ha

doi:10.1143/JJAP.50.104001

Organic/inorganic hybrid p-n junctions made of pentacene-sno₂ nanowires network

Sung Chan Park, Junghwan Huh, Daeil Kim, Seongmin Yee, Gyu Tae Kim, Jeong Sook Ha

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the temperature-dependent electrical properties of the p-n junction formed between a p-type pentacene film and n-type SnO₂ nanowires. Rectifying current-voltage characteristics were observed and analyzed by a series resistance and a diode model. As temperature decreased, forward current decreased fitting to the diode equation of I = I₀[exp(η kT) - 1] with a large ideality factor reaching η ∼ 420, indicating large surface states at the junction parts. The activation energy of the series resistance from the Arrhenius plot was estimated to be 35.6 meV indicating the dominant contribution of the pentacene layer as a series resistance in the equivalent model.

Original language	English
Journal	Japanese journal of applied physics
Volume	50
Issue number	10 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.104001
Publication status	Published - 2011 Oct

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Organic/inorganic hybrid p-n junctions made of pentacene-sno2 nanowires network",

abstract = "We have investigated the temperature-dependent electrical properties of the p-n junction formed between a p-type pentacene film and n-type SnO2 nanowires. Rectifying current-voltage characteristics were observed and analyzed by a series resistance and a diode model. As temperature decreased, forward current decreased fitting to the diode equation of I = I0[exp(η kT) - 1] with a large ideality factor reaching η ∼ 420, indicating large surface states at the junction parts. The activation energy of the series resistance from the Arrhenius plot was estimated to be 35.6 meV indicating the dominant contribution of the pentacene layer as a series resistance in the equivalent model.",

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AU - Huh, Junghwan

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AU - Yee, Seongmin

AU - Kim, Gyu Tae

AU - Ha, Jeong Sook

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AB - We have investigated the temperature-dependent electrical properties of the p-n junction formed between a p-type pentacene film and n-type SnO2 nanowires. Rectifying current-voltage characteristics were observed and analyzed by a series resistance and a diode model. As temperature decreased, forward current decreased fitting to the diode equation of I = I0[exp(η kT) - 1] with a large ideality factor reaching η ∼ 420, indicating large surface states at the junction parts. The activation energy of the series resistance from the Arrhenius plot was estimated to be 35.6 meV indicating the dominant contribution of the pentacene layer as a series resistance in the equivalent model.

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