Organic/inorganic hybrid p-n junctions made of pentacene-sno2 nanowires network

Sung Chan Park, Junghwan Huh, Daeil Kim, Seongmin Yee, Gyu-Tae Kim, Jeong Sook Ha

Research output: Contribution to journalArticle

Abstract

We have investigated the temperature-dependent electrical properties of the p-n junction formed between a p-type pentacene film and n-type SnO2 nanowires. Rectifying current-voltage characteristics were observed and analyzed by a series resistance and a diode model. As temperature decreased, forward current decreased fitting to the diode equation of I = I0[exp(η kT) - 1] with a large ideality factor reaching η ∼ 420, indicating large surface states at the junction parts. The activation energy of the series resistance from the Arrhenius plot was estimated to be 35.6 meV indicating the dominant contribution of the pentacene layer as a series resistance in the equivalent model.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume50
Issue number10 PART 1
DOIs
Publication statusPublished - 2011 Oct 1

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p-n junctions
Nanowires
Diodes
nanowires
Arrhenius plots
Surface states
Current voltage characteristics
diodes
Electric properties
Activation energy
Temperature
plots
electrical properties
activation energy
temperature
electric potential

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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Organic/inorganic hybrid p-n junctions made of pentacene-sno2 nanowires network. / Park, Sung Chan; Huh, Junghwan; Kim, Daeil; Yee, Seongmin; Kim, Gyu-Tae; Ha, Jeong Sook.

In: Japanese Journal of Applied Physics, Vol. 50, No. 10 PART 1, 01.10.2011.

Research output: Contribution to journalArticle

Park, Sung Chan ; Huh, Junghwan ; Kim, Daeil ; Yee, Seongmin ; Kim, Gyu-Tae ; Ha, Jeong Sook. / Organic/inorganic hybrid p-n junctions made of pentacene-sno2 nanowires network. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 10 PART 1.
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