Orientation-Controlled Growth of Pt Films on SrTiO3 (001) by Atomic Layer Deposition

Jung Joon Pyeon, Jun Yun Kang, Seung Hyub Baek, Chong Yun Kang, Jin Sang Kim, Doo Seok Jeong, Seong Keun Kim

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7 Citations (Scopus)


We grew Pt films on TiO2-terminated SrTiO3 (001) by atomic layer deposition, using trimethyl(methylcyclopentadienyl)-platinum(IV) as the Pt source and O2 and O3 as the oxidants. The orientation of the Pt films grown with O2 varied from (111) to (001) as the growth temperature was increased from 220 to 350 °C, while the Pt films grown with O3 have a strong preference for the (111) orientation even at a high growth temperature of 350 °C. The difference in the orientation of the Pt films on SrTiO3 (001) was attributed to changes in the degree of chemical bonding across the Pt/SrTiO3 interface with respect to the oxidant. We observed an increase in Pt-O bonding at the interface between the Pt grown with O3 and the SrTiO3 substrate. The interfacial energy of Pt (111)∥SrTiO3 (001) may have been significantly decreased by the increase in Pt-O bonding at the interface, which eventually led to the strong (111) preference of the Pt grown with O3. The findings provide the possibility of controlling the orientation of Pt without manipulating the kinetic energy of crystal growth.

Original languageEnglish
Pages (from-to)6779-6783
Number of pages5
JournalChemistry of Materials
Issue number19
Publication statusPublished - 2015 Sep 11

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry


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