Origin of dislocation-related photoluminescence bands in very thin silicon-germanium layers grown on silicon substrates

Hosun Lee, Suk H. Choi, Tae Yeon Seong

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Abstract

We measured the photoluminescence spectra of very thin and partially strained Si1-xGex (0.2≤x ≤0.5) layers grown on silicon substrates with varying degrees of strain relaxation. We observed photoluminescence lines, so-called D lines, which arise from dislocations in the Si1-xGex/Si alloys. Surprisingly, we observed no D lines originating from the Si1-xGex layers. We identify the origin of the D lines as the penetrated dislocations in the Si substrates extending from the SiGe/Si interface with the assistance of transmission electron microscopy. We discuss possible mechanisms of the dominance of luminescence from the dislocations in the Si substrates over those in the SiGe layers.

Original languageEnglish
Pages (from-to)3823-3825
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number26
Publication statusPublished - 1997 Dec 29
Externally publishedYes

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D lines
germanium
photoluminescence
silicon
luminescence
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Origin of dislocation-related photoluminescence bands in very thin silicon-germanium layers grown on silicon substrates. / Lee, Hosun; Choi, Suk H.; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 71, No. 26, 29.12.1997, p. 3823-3825.

Research output: Contribution to journalArticle

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