Origin of lowered crystallization temperature in SBT-BTT ferroelectric thin films

Woo Chul Kwak, Gopinathan M A Kumar, Se Yon Jung, Seung Joon Hwang, Yun Mo Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The crystallization kinetics of SBT and SBT-BTT thin films formed by sol-gel technique on Pt substrate was studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetics analysis was performed on x-ray diffraction (XRD) patterns of the thin films heated in the range 730 to 760°C at 10°C intervals. Activation energy and Avrami exponent values were determined for the fluorite of Aurivillus phase formation. A reduction of ∼55 kJ/mol in activation is observed for the SBT-BTT system. A comparison has been made and the possible crystallization mechanism is discussed.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages95-100
Number of pages6
Volume688
Publication statusPublished - 2002
Externally publishedYes
EventFerroelectric Thin Films X - Boston, MA, United States
Duration: 2001 Nov 252001 Nov 29

Other

OtherFerroelectric Thin Films X
CountryUnited States
CityBoston, MA
Period01/11/2501/11/29

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kwak, W. C., Kumar, G. M. A., Jung, S. Y., Hwang, S. J., & Sung, Y. M. (2002). Origin of lowered crystallization temperature in SBT-BTT ferroelectric thin films. In Materials Research Society Symposium - Proceedings (Vol. 688, pp. 95-100)