Origin of lowered crystallization temperature in SBT-BTT ferroelectric thin films

Woo Chul Kwak, Gopinathan M.A. Kumar, Se Yon Jung, Seung Joon Hwang, Yun Mo Sung

Research output: Contribution to journalConference article

Abstract

The crystallization kinetics of SBT and SBT-BTT thin films formed by sol-gel technique on Pt substrate was studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetics analysis was performed on x-ray diffraction (XRD) patterns of the thin films heated in the range 730 to 760°C at 10°C intervals. Activation energy and Avrami exponent values were determined for the fluorite of Aurivillus phase formation. A reduction of ∼55 kJ/mol in activation is observed for the SBT-BTT system. A comparison has been made and the possible crystallization mechanism is discussed.

Original languageEnglish
Pages (from-to)95-100
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume688
Publication statusPublished - 2002
EventFerroelectric Thin Films X - Boston, MA, United States
Duration: 2001 Nov 252001 Nov 29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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