Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

Tian Li, Sanghoon Kim, Seung Jae Lee, Seo Won Lee, Tomohiro Koyama, Daichi Chiba, Takahiro Moriyama, Kyoung Jin Lee, Kab Jin Kim, Teruo Ono

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.

Original languageEnglish
Article number073001
JournalApplied Physics Express
Volume10
Issue number7
DOIs
Publication statusPublished - 2017 Jul 1

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Li, T., Kim, S., Lee, S. J., Lee, S. W., Koyama, T., Chiba, D., Moriyama, T., Lee, K. J., Kim, K. J., & Ono, T. (2017). Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers. Applied Physics Express, 10(7), [073001]. https://doi.org/10.7567/APEX.10.073001