Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

Tian Li; Sanghoon Kim; Seung Jae Lee; Seo Won Lee; Tomohiro Koyama; Daichi Chiba; Takahiro Moriyama; Kyung Jin Lee; Kab Jin Kim; Teruo Ono

doi:10.7567/APEX.10.073001

Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

Tian Li, Sanghoon Kim, Seung Jae Lee, Seo Won Lee, Tomohiro Koyama, Daichi Chiba, Takahiro Moriyama, Kyung Jin Lee, Kab Jin Kim, Teruo Ono

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.

Original language	English
Article number	073001
Journal	Applied Physics Express
Volume	10
Issue number	7
DOIs	https://doi.org/10.7567/APEX.10.073001
Publication status	Published - 2017 Jul

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.",

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T1 - Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

AU - Li, Tian

AU - Kim, Sanghoon

AU - Lee, Seung Jae

AU - Lee, Seo Won

AU - Koyama, Tomohiro

AU - Chiba, Daichi

AU - Moriyama, Takahiro

AU - Lee, Kyung Jin

AU - Kim, Kab Jin

AU - Ono, Teruo

PY - 2017/7

Y1 - 2017/7

N2 - The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.

AB - The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.

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