Origin of two types of excitons in CdSe dots on ZnSe

Sang Hoon Lee, J. Kim, H. Rho

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Recent micro-PL and time-resolved PL data performed on CdSe dots embedded in ZnSe show compelling evidence that the PL emission results from two different kinds of states. We propose a model explaining the origin of these different states coexisting within a single dot. The main concept of the model is that, while the ground state of the heavy hole is confined to strain-induced potential pockets at the bottom of the island, the electrons and the first excited state in the valence band are distributed within the entire island. That difference in the degree of localization between the two heavy-hole band states is responsible for the different properties of PL transitions observed in our experiments.

Original languageEnglish
Pages (from-to)R2405-R2408
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number4
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes

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Excitons
excitons
Valence bands
Excited states
Ground state
valence
ground state
Electrons
excitation
electrons
Experiments
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Origin of two types of excitons in CdSe dots on ZnSe. / Lee, Sang Hoon; Kim, J.; Rho, H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 61, No. 4, 01.01.2000, p. R2405-R2408.

Research output: Contribution to journalArticle

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