Abstract
Recent micro-PL and time-resolved PL data performed on CdSe dots embedded in ZnSe show compelling evidence that the PL emission results from two different kinds of states. We propose a model explaining the origin of these different states coexisting within a single dot. The main concept of the model is that, while the ground state of the heavy hole is confined to strain-induced potential pockets at the bottom of the island, the electrons and the first excited state in the valence band are distributed within the entire island. That difference in the degree of localization between the two heavy-hole band states is responsible for the different properties of PL transitions observed in our experiments.
| Original language | English |
|---|---|
| Pages (from-to) | R2405-R2408 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 61 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Origin of two types of excitons in CdSe dots on ZnSe. / Lee, Sang Hoon; Kim, J.; Rho, H.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 61, No. 4, 01.01.2000, p. R2405-R2408.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Origin of two types of excitons in CdSe dots on ZnSe
AU - Lee, Sang Hoon
AU - Kim, J.
AU - Rho, H.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - Recent micro-PL and time-resolved PL data performed on CdSe dots embedded in ZnSe show compelling evidence that the PL emission results from two different kinds of states. We propose a model explaining the origin of these different states coexisting within a single dot. The main concept of the model is that, while the ground state of the heavy hole is confined to strain-induced potential pockets at the bottom of the island, the electrons and the first excited state in the valence band are distributed within the entire island. That difference in the degree of localization between the two heavy-hole band states is responsible for the different properties of PL transitions observed in our experiments.
AB - Recent micro-PL and time-resolved PL data performed on CdSe dots embedded in ZnSe show compelling evidence that the PL emission results from two different kinds of states. We propose a model explaining the origin of these different states coexisting within a single dot. The main concept of the model is that, while the ground state of the heavy hole is confined to strain-induced potential pockets at the bottom of the island, the electrons and the first excited state in the valence band are distributed within the entire island. That difference in the degree of localization between the two heavy-hole band states is responsible for the different properties of PL transitions observed in our experiments.
UR - http://www.scopus.com/inward/record.url?scp=0000852660&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000852660&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.61.R2405
DO - 10.1103/PhysRevB.61.R2405
M3 - Article
VL - 61
SP - R2405-R2408
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 4
ER -