Oscillator and amplifier grids

David Rutledge, Jonathan B. Hacker, Moonil Kim, Robert M. Weikle, R. Peter Smith, Emilio Sovero

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The authors present the largest recorded output power for a quasi-optical power-combining array and a new planar heterojunction bipolar transistor (HBT) grid amplifier design. A 16-element MESFET grid oscillator has been fabricated that generated an effective radiated power of 28 W at 9.21 GHz. The total radiated power was estimated to be 2.0 W, giving a DC to RF efficiency of 28%. A new planar grid amplifier is also presented that is suitable for monolithic fabrication. The planar amplifier grid is a hybrid design using HBT transistors monolithically fabricated in a differential pair configuration and wire bonded to a Duroid substrate. The grid amplifier had a measured gain of 11 dB at 9.9 GHz.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages815-818
Number of pages4
Volume2
ISBN (Print)0780306112
Publication statusPublished - 1992 Dec 1
Event1992 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3) - Albuquerque, NM, USA
Duration: 1992 Jun 11992 Jun 5

Other

Other1992 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3)
CityAlbuquerque, NM, USA
Period92/6/192/6/5

Fingerprint

Heterojunction bipolar transistors
amplifiers
grids
oscillators
bipolar transistors
Transistors
Wire
heterojunctions
Fabrication
Substrates
amplifier design
transistors
field effect transistors
direct current
wire
fabrication
output
configurations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Rutledge, D., Hacker, J. B., Kim, M., Weikle, R. M., Smith, R. P., & Sovero, E. (1992). Oscillator and amplifier grids. In IEEE MTT-S International Microwave Symposium Digest (Vol. 2, pp. 815-818). Piscataway, NJ, United States: Publ by IEEE.

Oscillator and amplifier grids. / Rutledge, David; Hacker, Jonathan B.; Kim, Moonil; Weikle, Robert M.; Smith, R. Peter; Sovero, Emilio.

IEEE MTT-S International Microwave Symposium Digest. Vol. 2 Piscataway, NJ, United States : Publ by IEEE, 1992. p. 815-818.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rutledge, D, Hacker, JB, Kim, M, Weikle, RM, Smith, RP & Sovero, E 1992, Oscillator and amplifier grids. in IEEE MTT-S International Microwave Symposium Digest. vol. 2, Publ by IEEE, Piscataway, NJ, United States, pp. 815-818, 1992 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3), Albuquerque, NM, USA, 92/6/1.
Rutledge D, Hacker JB, Kim M, Weikle RM, Smith RP, Sovero E. Oscillator and amplifier grids. In IEEE MTT-S International Microwave Symposium Digest. Vol. 2. Piscataway, NJ, United States: Publ by IEEE. 1992. p. 815-818
Rutledge, David ; Hacker, Jonathan B. ; Kim, Moonil ; Weikle, Robert M. ; Smith, R. Peter ; Sovero, Emilio. / Oscillator and amplifier grids. IEEE MTT-S International Microwave Symposium Digest. Vol. 2 Piscataway, NJ, United States : Publ by IEEE, 1992. pp. 815-818
@inproceedings{fd88a39620be428c8f892179946d7e03,
title = "Oscillator and amplifier grids",
abstract = "The authors present the largest recorded output power for a quasi-optical power-combining array and a new planar heterojunction bipolar transistor (HBT) grid amplifier design. A 16-element MESFET grid oscillator has been fabricated that generated an effective radiated power of 28 W at 9.21 GHz. The total radiated power was estimated to be 2.0 W, giving a DC to RF efficiency of 28{\%}. A new planar grid amplifier is also presented that is suitable for monolithic fabrication. The planar amplifier grid is a hybrid design using HBT transistors monolithically fabricated in a differential pair configuration and wire bonded to a Duroid substrate. The grid amplifier had a measured gain of 11 dB at 9.9 GHz.",
author = "David Rutledge and Hacker, {Jonathan B.} and Moonil Kim and Weikle, {Robert M.} and Smith, {R. Peter} and Emilio Sovero",
year = "1992",
month = "12",
day = "1",
language = "English",
isbn = "0780306112",
volume = "2",
pages = "815--818",
booktitle = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Publ by IEEE",

}

TY - GEN

T1 - Oscillator and amplifier grids

AU - Rutledge, David

AU - Hacker, Jonathan B.

AU - Kim, Moonil

AU - Weikle, Robert M.

AU - Smith, R. Peter

AU - Sovero, Emilio

PY - 1992/12/1

Y1 - 1992/12/1

N2 - The authors present the largest recorded output power for a quasi-optical power-combining array and a new planar heterojunction bipolar transistor (HBT) grid amplifier design. A 16-element MESFET grid oscillator has been fabricated that generated an effective radiated power of 28 W at 9.21 GHz. The total radiated power was estimated to be 2.0 W, giving a DC to RF efficiency of 28%. A new planar grid amplifier is also presented that is suitable for monolithic fabrication. The planar amplifier grid is a hybrid design using HBT transistors monolithically fabricated in a differential pair configuration and wire bonded to a Duroid substrate. The grid amplifier had a measured gain of 11 dB at 9.9 GHz.

AB - The authors present the largest recorded output power for a quasi-optical power-combining array and a new planar heterojunction bipolar transistor (HBT) grid amplifier design. A 16-element MESFET grid oscillator has been fabricated that generated an effective radiated power of 28 W at 9.21 GHz. The total radiated power was estimated to be 2.0 W, giving a DC to RF efficiency of 28%. A new planar grid amplifier is also presented that is suitable for monolithic fabrication. The planar amplifier grid is a hybrid design using HBT transistors monolithically fabricated in a differential pair configuration and wire bonded to a Duroid substrate. The grid amplifier had a measured gain of 11 dB at 9.9 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0027067613&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027067613&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027067613

SN - 0780306112

VL - 2

SP - 815

EP - 818

BT - IEEE MTT-S International Microwave Symposium Digest

PB - Publ by IEEE

CY - Piscataway, NJ, United States

ER -