Oscillator and amplifier grids

David Rutledge, Jonathan B. Hacker, Moonil Kim, Robert M. Weikle, R. Peter Smith, Emilio Sovero

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The authors present the largest recorded output power for a quasi-optical power-combining array and a new planar heterojunction bipolar transistor (HBT) grid amplifier design. A 16-element MESFET grid oscillator has been fabricated that generated an effective radiated power of 28 W at 9.21 GHz. The total radiated power was estimated to be 2.0 W, giving a DC to RF efficiency of 28%. A new planar grid amplifier is also presented that is suitable for monolithic fabrication. The planar amplifier grid is a hybrid design using HBT transistors monolithically fabricated in a differential pair configuration and wire bonded to a Duroid substrate. The grid amplifier had a measured gain of 11 dB at 9.9 GHz.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
PublisherPubl by IEEE
Pages815-818
Number of pages4
ISBN (Print)0780306112
Publication statusPublished - 1992 Dec 1
Event1992 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3) - Albuquerque, NM, USA
Duration: 1992 Jun 11992 Jun 5

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2
ISSN (Print)0149-645X

Other

Other1992 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3)
CityAlbuquerque, NM, USA
Period92/6/192/6/5

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ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Rutledge, D., Hacker, J. B., Kim, M., Weikle, R. M., Smith, R. P., & Sovero, E. (1992). Oscillator and amplifier grids. In IEEE MTT-S International Microwave Symposium Digest (pp. 815-818). (IEEE MTT-S International Microwave Symposium Digest; Vol. 2). Publ by IEEE.