OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction

June Whan Choi, Ho Gyu Yoon, Jai Kyeong Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol-gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol-gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10-9 A under operating voltage and dielectric constants were measured to be ∼6.5 at 10 kHz. The field effect mobility and on-off ratio were ∼0.86 cm2/V s and ∼104, respectively. These results demonstrate that sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.

Original languageEnglish
Pages (from-to)1145-1148
Number of pages4
JournalOrganic Electronics
Issue number6
Publication statusPublished - 2010 Jun


  • Hybrid gate insulators
  • OTFTs
  • Organic thin-film transistors
  • Organic-inorganic hybrid materials
  • Pentacene organic semiconductor
  • Sol-gel materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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