OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction

June Whan Choi, Ho Gyu Yoon, Jai Kyeong Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol-gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol-gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10-9 A under operating voltage and dielectric constants were measured to be ∼6.5 at 10 kHz. The field effect mobility and on-off ratio were ∼0.86 cm2/V s and ∼104, respectively. These results demonstrate that sol-gel hybrid systems are suitable for gate dielectrics in OTFTs.

Original languageEnglish
Pages (from-to)1145-1148
Number of pages4
JournalOrganic Electronics: physics, materials, applications
Volume11
Issue number6
DOIs
Publication statusPublished - 2010 Jun 1

Fingerprint

Gate dielectrics
Thin film transistors
curing
Sol-gel process
Sol-gels
Curing
transistors
gels
sol-gel processes
thin films
Titanium
Hybrid systems
Leakage currents
Permittivity
Resins
acetylacetone
Electric potential
resins
leakage
titanium

Keywords

  • Hybrid gate insulators
  • Organic thin-film transistors
  • Organic-inorganic hybrid materials
  • OTFTs
  • Pentacene organic semiconductor
  • Sol-gel materials

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Cite this

OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction. / Choi, June Whan; Yoon, Ho Gyu; Kim, Jai Kyeong.

In: Organic Electronics: physics, materials, applications, Vol. 11, No. 6, 01.06.2010, p. 1145-1148.

Research output: Contribution to journalArticle

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