Overcoming Zn segregation in CdZnTe with the temperature gradient annealing

Kihyun Kim, A. E. Bolotnikov, G. S. Camarda, A. Hossain, R. B. James

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The availability of large volume crystals with the same energy gap in melt-grown CdZnTe (CZT) is restricted due to the Zn segregation in CdTe hosts. We observed the migration of Zn in the solid phase along the positive temperature gradient direction both in situ and post-growth temperature gradient annealing (TGA) of CZT. Diffusivity of Zn obtained from the in situ TGA was approximately 10-5 cm2/s order and completely different mechanism with that of post-growth. The CZT ingots obtained through in situ TGA have uniform Zn and resistivity of 1010Ωcm orders. The CZT detectors fabricated from in situ TGA applied ingots exhibit 10% of energy resolution for 59.5 keV peak of 241Am.

Original languageEnglish
Pages (from-to)98-101
Number of pages4
JournalJournal of Crystal Growth
Volume442
DOIs
Publication statusPublished - 2016 May 15

Fingerprint

Thermal gradients
temperature gradients
Annealing
annealing
ingots
Ingots
Growth temperature
diffusivity
availability
solid phases
Energy gap
CdZnTe
Availability
Detectors
Crystals
electrical resistivity
detectors
crystals
energy

Keywords

  • A1. Segregation
  • A2. Bridgman technique
  • B1. Cadmium compounds
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Overcoming Zn segregation in CdZnTe with the temperature gradient annealing. / Kim, Kihyun; Bolotnikov, A. E.; Camarda, G. S.; Hossain, A.; James, R. B.

In: Journal of Crystal Growth, Vol. 442, 15.05.2016, p. 98-101.

Research output: Contribution to journalArticle

Kim, Kihyun ; Bolotnikov, A. E. ; Camarda, G. S. ; Hossain, A. ; James, R. B. / Overcoming Zn segregation in CdZnTe with the temperature gradient annealing. In: Journal of Crystal Growth. 2016 ; Vol. 442. pp. 98-101.
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