Oxidation effects on CuIn xGa 1-xSe yS 2-y thin film growth by solution processes

Se Jin Park; Eunjoo Lee; Hyo Sang Jeon; Jihye Gwak; Min-Kyu Oh; Byoung Koun Min

doi:10.1016/j.tsf.2011.10.162

Oxidation effects on CuIn _xGa _1-xSe _yS _2-y thin film growth by solution processes

Se Jin Park, Eunjoo Lee, Hyo Sang Jeon, Jihye Gwak, Min-Kyu Oh, Byoung Koun Min

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

The oxidation effects on CuIn _xGa _1-xSe _yS _2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.

Original language	English
Pages (from-to)	3048-3053
Number of pages	6
Journal	Thin Solid Films
Volume	520
Issue number	7
DOIs	https://doi.org/10.1016/j.tsf.2011.10.162
Publication status	Published - 2012 Jan 31

Keywords

Air-annealing
CuIn Ga Se S
Oxidation
Solar cells
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Metals and Alloys
Surfaces, Coatings and Films
Surfaces and Interfaces

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Park, S. J., Lee, E., Jeon, H. S., Gwak, J., Oh, M-K., & Min, B. K. (2012). Oxidation effects on CuIn _xGa _1-xSe _yS _2-y thin film growth by solution processes. Thin Solid Films, 520(7), 3048-3053. https://doi.org/10.1016/j.tsf.2011.10.162

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abstract = "The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.",

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AU - Jeon, Hyo Sang

AU - Gwak, Jihye

AU - Oh, Min-Kyu

AU - Min, Byoung Koun

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N2 - The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.

AB - The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.

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