Oxidation effects on CuIn xGa 1-xSe yS 2-y thin film growth by solution processes

Se Jin Park, Eunjoo Lee, Hyo Sang Jeon, Jihye Gwak, Min-Kyu Oh, Byoung Koun Min

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.

Original languageEnglish
Pages (from-to)3048-3053
Number of pages6
JournalThin Solid Films
Volume520
Issue number7
DOIs
Publication statusPublished - 2012 Jan 31

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Keywords

  • Air-annealing
  • CuIn Ga Se S
  • Oxidation
  • Solar cells
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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