Abstract
The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 3048-3053 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 520 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2012 Jan 31 |
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Keywords
- Air-annealing
- CuIn Ga Se S
- Oxidation
- Solar cells
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Oxidation effects on CuIn xGa 1-xSe yS 2-y thin film growth by solution processes. / Park, Se Jin; Lee, Eunjoo; Jeon, Hyo Sang; Gwak, Jihye; Oh, Min-Kyu; Min, Byoung Koun.
In: Thin Solid Films, Vol. 520, No. 7, 31.01.2012, p. 3048-3053.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Oxidation effects on CuIn xGa 1-xSe yS 2-y thin film growth by solution processes
AU - Park, Se Jin
AU - Lee, Eunjoo
AU - Jeon, Hyo Sang
AU - Gwak, Jihye
AU - Oh, Min-Kyu
AU - Min, Byoung Koun
PY - 2012/1/31
Y1 - 2012/1/31
N2 - The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.
AB - The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.
KW - Air-annealing
KW - CuIn Ga Se S
KW - Oxidation
KW - Solar cells
KW - Thin films
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UR - http://www.scopus.com/inward/citedby.url?scp=84856400158&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2011.10.162
DO - 10.1016/j.tsf.2011.10.162
M3 - Article
AN - SCOPUS:84856400158
VL - 520
SP - 3048
EP - 3053
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 7
ER -