Oxidation effects on CuIn xGa 1-xSe yS 2-y thin film growth by solution processes

Se Jin Park; Eunjoo Lee; Hyo Sang Jeon; Jihye Gwak; Min Kyu Oh; Byoung Koun Min

doi:10.1016/j.tsf.2011.10.162

Oxidation effects on CuIn _xGa _1-xSe _yS _2-y thin film growth by solution processes

Se Jin Park, Eunjoo Lee, Hyo Sang Jeon, Jihye Gwak, Min Kyu Oh, Byoung Koun Min

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The oxidation effects on CuIn _xGa _1-xSe _yS _2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.

Original language	English
Pages (from-to)	3048-3053
Number of pages	6
Journal	Thin Solid Films
Volume	520
Issue number	7
DOIs	https://doi.org/10.1016/j.tsf.2011.10.162
Publication status	Published - 2012 Jan 31

Keywords

Air-annealing
CuIn Ga Se S
Oxidation
Solar cells
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2011.10.162

Fingerprint Dive into the research topics of 'Oxidation effects on CuIn xGa 1-xSe yS 2-y thin film growth by solution processes'. Together they form a unique fingerprint.

Cite this

@article{ae9368efe2dc49f093d6cf45ce523acd,

title = "Oxidation effects on CuIn xGa 1-xSe yS 2-y thin film growth by solution processes",

abstract = "The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.",

keywords = "Air-annealing, CuIn Ga Se S, Oxidation, Solar cells, Thin films",

author = "Park, {Se Jin} and Eunjoo Lee and Jeon, {Hyo Sang} and Jihye Gwak and Oh, {Min Kyu} and Min, {Byoung Koun}",

year = "2012",

month = jan,

day = "31",

doi = "10.1016/j.tsf.2011.10.162",

language = "English",

volume = "520",

pages = "3048--3053",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "7",

}

TY - JOUR

T1 - Oxidation effects on CuIn xGa 1-xSe yS 2-y thin film growth by solution processes

AU - Park, Se Jin

AU - Lee, Eunjoo

AU - Jeon, Hyo Sang

AU - Gwak, Jihye

AU - Oh, Min Kyu

AU - Min, Byoung Koun

PY - 2012/1/31

Y1 - 2012/1/31

N2 - The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.

AB - The oxidation effects on CuIn xGa 1-xSe yS 2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ∼ 4% solar cell efficiency at standard irradiation conditions.

KW - Air-annealing

KW - CuIn Ga Se S

KW - Oxidation

KW - Solar cells

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84856400158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856400158&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.10.162

DO - 10.1016/j.tsf.2011.10.162

M3 - Article

AN - SCOPUS:84856400158

VL - 520

SP - 3048

EP - 3053

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 7

ER -