Oxidation endurance of boron nitride nanotube field emitters

Yenan Song, Dong Hoon Shin, Ki Nam Yun, Cheol Jin Lee, Yoon Ho Song, William I. Milne

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.

Original languageEnglish
Title of host publicationTechnical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages235-236
Number of pages2
ISBN (Print)9781479953080
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 - Engelberg, Switzerland
Duration: 2014 Jul 62014 Jul 10

Other

Other2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
CountrySwitzerland
CityEngelberg
Period14/7/614/7/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Song, Y., Shin, D. H., Yun, K. N., Lee, C. J., Song, Y. H., & Milne, W. I. (2014). Oxidation endurance of boron nitride nanotube field emitters. In Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 (pp. 235-236). [6894830] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2014.6894830