Oxidation endurance of boron nitride nanotube field emitters

Yenan Song, Dong Hoon Shin, Ki Nam Yun, Cheol Jin Lee, Yoon Ho Song, William I. Milne

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.

Original languageEnglish
Title of host publicationTechnical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages235-236
Number of pages2
ISBN (Print)9781479953080
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 - Engelberg, Switzerland
Duration: 2014 Jul 62014 Jul 10

Other

Other2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
CountrySwitzerland
CityEngelberg
Period14/7/614/7/10

Fingerprint

Boron nitride
Nanotubes
Durability
Field emission
Oxidation
Annealing
Electron affinity
Electron emission
Nanostructured materials
Current density
Degradation
Temperature
Air
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Song, Y., Shin, D. H., Yun, K. N., Lee, C. J., Song, Y. H., & Milne, W. I. (2014). Oxidation endurance of boron nitride nanotube field emitters. In Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 (pp. 235-236). [6894830] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2014.6894830

Oxidation endurance of boron nitride nanotube field emitters. / Song, Yenan; Shin, Dong Hoon; Yun, Ki Nam; Lee, Cheol Jin; Song, Yoon Ho; Milne, William I.

Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 235-236 6894830.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Song, Y, Shin, DH, Yun, KN, Lee, CJ, Song, YH & Milne, WI 2014, Oxidation endurance of boron nitride nanotube field emitters. in Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014., 6894830, Institute of Electrical and Electronics Engineers Inc., pp. 235-236, 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014, Engelberg, Switzerland, 14/7/6. https://doi.org/10.1109/IVNC.2014.6894830
Song Y, Shin DH, Yun KN, Lee CJ, Song YH, Milne WI. Oxidation endurance of boron nitride nanotube field emitters. In Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 235-236. 6894830 https://doi.org/10.1109/IVNC.2014.6894830
Song, Yenan ; Shin, Dong Hoon ; Yun, Ki Nam ; Lee, Cheol Jin ; Song, Yoon Ho ; Milne, William I. / Oxidation endurance of boron nitride nanotube field emitters. Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 235-236
@inproceedings{7958d8c416044c14b94ed20dcda8e3d0,
title = "Oxidation endurance of boron nitride nanotube field emitters",
abstract = "Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.",
keywords = "Boron nitride nanotubes, Field emission, Oxidation endurance",
author = "Yenan Song and Shin, {Dong Hoon} and Yun, {Ki Nam} and Lee, {Cheol Jin} and Song, {Yoon Ho} and Milne, {William I.}",
year = "2014",
month = "1",
day = "1",
doi = "10.1109/IVNC.2014.6894830",
language = "English",
isbn = "9781479953080",
pages = "235--236",
booktitle = "Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Oxidation endurance of boron nitride nanotube field emitters

AU - Song, Yenan

AU - Shin, Dong Hoon

AU - Yun, Ki Nam

AU - Lee, Cheol Jin

AU - Song, Yoon Ho

AU - Milne, William I.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.

AB - Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.

KW - Boron nitride nanotubes

KW - Field emission

KW - Oxidation endurance

UR - http://www.scopus.com/inward/record.url?scp=84908570695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908570695&partnerID=8YFLogxK

U2 - 10.1109/IVNC.2014.6894830

DO - 10.1109/IVNC.2014.6894830

M3 - Conference contribution

AN - SCOPUS:84908570695

SN - 9781479953080

SP - 235

EP - 236

BT - Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -