Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

Seo Hyoung Chang, Shin Buhm Lee, Dae Young Jeon, So Jung Park, Gyu-Tae Kim, Sang Mo Yang, Seung Chul Chae, Hyang Keun Yoo, Bo Soo Kang, Myoung Jae Lee, Tae Won Noh

Research output: Contribution to journalArticle

95 Citations (Scopus)

Abstract

A TiO 2/VO 2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

Original languageEnglish
Pages (from-to)4063-4067
Number of pages5
JournalAdvanced Materials
Volume23
Issue number35
DOIs
Publication statusPublished - 2011 Sep 15

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Oxides
Data storage equipment
Switches
Thin films

Keywords

  • crossbar architecture
  • nanodevices
  • resistance switching
  • sneak path problem
  • titanium dioxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chang, S. H., Lee, S. B., Jeon, D. Y., Park, S. J., Kim, G-T., Yang, S. M., ... Noh, T. W. (2011). Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory. Advanced Materials, 23(35), 4063-4067. https://doi.org/10.1002/adma.201102395

Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory. / Chang, Seo Hyoung; Lee, Shin Buhm; Jeon, Dae Young; Park, So Jung; Kim, Gyu-Tae; Yang, Sang Mo; Chae, Seung Chul; Yoo, Hyang Keun; Kang, Bo Soo; Lee, Myoung Jae; Noh, Tae Won.

In: Advanced Materials, Vol. 23, No. 35, 15.09.2011, p. 4063-4067.

Research output: Contribution to journalArticle

Chang, SH, Lee, SB, Jeon, DY, Park, SJ, Kim, G-T, Yang, SM, Chae, SC, Yoo, HK, Kang, BS, Lee, MJ & Noh, TW 2011, 'Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory', Advanced Materials, vol. 23, no. 35, pp. 4063-4067. https://doi.org/10.1002/adma.201102395
Chang, Seo Hyoung ; Lee, Shin Buhm ; Jeon, Dae Young ; Park, So Jung ; Kim, Gyu-Tae ; Yang, Sang Mo ; Chae, Seung Chul ; Yoo, Hyang Keun ; Kang, Bo Soo ; Lee, Myoung Jae ; Noh, Tae Won. / Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory. In: Advanced Materials. 2011 ; Vol. 23, No. 35. pp. 4063-4067.
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