Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

Seo Hyoung Chang; Shin Buhm Lee; Dae Young Jeon; So Jung Park; Gyu Tae Kim; Sang Mo Yang; Seung Chul Chae; Hyang Keun Yoo; Bo Soo Kang; Myoung Jae Lee; Tae Won Noh

doi:10.1002/adma.201102395

Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

Seo Hyoung Chang, Shin Buhm Lee, Dae Young Jeon, So Jung Park, Gyu Tae Kim, Sang Mo Yang, Seung Chul Chae, Hyang Keun Yoo, Bo Soo Kang, Myoung Jae Lee, Tae Won Noh

Research output: Contribution to journal › Article › peer-review

110 Citations (Scopus)

Abstract

A TiO ₂/VO ₂ oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO ₂ and VO ₂ thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

Original language	English
Pages (from-to)	4063-4067
Number of pages	5
Journal	Advanced Materials
Volume	23
Issue number	35
DOIs	https://doi.org/10.1002/adma.201102395
Publication status	Published - 2011 Sept 15

Keywords

crossbar architecture
nanodevices
resistance switching
sneak path problem
titanium dioxide

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201102395

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title = "Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory",

abstract = "A TiO 2/VO 2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.",

keywords = "crossbar architecture, nanodevices, resistance switching, sneak path problem, titanium dioxide",

author = "Chang, {Seo Hyoung} and Lee, {Shin Buhm} and Jeon, {Dae Young} and Park, {So Jung} and Kim, {Gyu Tae} and Yang, {Sang Mo} and Chae, {Seung Chul} and Yoo, {Hyang Keun} and Kang, {Bo Soo} and Lee, {Myoung Jae} and Noh, {Tae Won}",

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doi = "10.1002/adma.201102395",

language = "English",

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T1 - Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

AU - Chang, Seo Hyoung

AU - Lee, Shin Buhm

AU - Jeon, Dae Young

AU - Park, So Jung

AU - Kim, Gyu Tae

AU - Yang, Sang Mo

AU - Chae, Seung Chul

AU - Yoo, Hyang Keun

AU - Kang, Bo Soo

AU - Lee, Myoung Jae

AU - Noh, Tae Won

PY - 2011/9/15

Y1 - 2011/9/15

N2 - A TiO 2/VO 2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

AB - A TiO 2/VO 2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

KW - crossbar architecture

KW - nanodevices

KW - resistance switching

KW - sneak path problem

KW - titanium dioxide

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SN - 0935-9648

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EP - 4067

JO - Advanced Materials

JF - Advanced Materials

IS - 35

ER -

Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

Abstract

Keywords

ASJC Scopus subject areas

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