Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory

Seo Hyoung Chang, Shin Buhm Lee, Dae Young Jeon, So Jung Park, Gyu-Tae Kim, Sang Mo Yang, Seung Chul Chae, Hyang Keun Yoo, Bo Soo Kang, Myoung Jae Lee, Tae Won Noh

Research output: Contribution to journalArticle

98 Citations (Scopus)

Abstract

A TiO 2/VO 2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

Original languageEnglish
Pages (from-to)4063-4067
Number of pages5
JournalAdvanced Materials
Volume23
Issue number35
DOIs
Publication statusPublished - 2011 Sep 15

Keywords

  • crossbar architecture
  • nanodevices
  • resistance switching
  • sneak path problem
  • titanium dioxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Chang, S. H., Lee, S. B., Jeon, D. Y., Park, S. J., Kim, G-T., Yang, S. M., Chae, S. C., Yoo, H. K., Kang, B. S., Lee, M. J., & Noh, T. W. (2011). Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory. Advanced Materials, 23(35), 4063-4067. https://doi.org/10.1002/adma.201102395