Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films

Eung Ryul Park, Hyuk Kyoo Jang, Eung Kil Kang, Cheol Eui Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol-gel-derived Pb(Zrx,Ti1-x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450-°C. Subsequent RF oxygen-plasma treatment at 200 and 300-°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15-μC/cm 2.

Original languageEnglish
Pages (from-to)536-540
Number of pages5
JournalMaterials Research Bulletin
Volume41
Issue number3
DOIs
Publication statusPublished - 2006 Mar 9

Fingerprint

oxygen plasma
Lead
Oxygen
Plasmas
Thin films
Ferroelectric thin films
thin films
Processing
ambience
microwaves
Microwaves
Temperature
Remanence
hysteresis
gels
Ferroelectric materials
Sol-gels
Hysteresis
room temperature
oxygen

Keywords

  • A. Thin films
  • B. Epitaxial growth
  • C. Photoelectron spectroscopy
  • D. Ferroelectricity

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films. / Park, Eung Ryul; Jang, Hyuk Kyoo; Kang, Eung Kil; Lee, Cheol Eui.

In: Materials Research Bulletin, Vol. 41, No. 3, 09.03.2006, p. 536-540.

Research output: Contribution to journalArticle

Park, Eung Ryul ; Jang, Hyuk Kyoo ; Kang, Eung Kil ; Lee, Cheol Eui. / Oxygen-plasma treatment for low-temperature processing of lead-zirconate-titanate thin films. In: Materials Research Bulletin. 2006 ; Vol. 41, No. 3. pp. 536-540.
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