Oxygen-plasma treatment of sol-gel derived lead zirconate titanate thin films

Cheol Eui Lee, H. K. Jang, E. R. Park, E. K. Kang, S. K. Lee, S. J. Noh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Oxygen-plasma treatment has been introduced for improving electrical characteristics and low-temperature processing of sol-gel derived Pb(Zr x , Ti l - x )O 3 (PZT) thin films. The ferroelectric PZT films with room temperature oxygen-plasma treatment showed enhanced polarization and decreased leakage current densities, as well as much reduced electrical fatigues. Besides, oxygen-plasma treatment at 200C, following a low-temperature annealing in oxygen at 450C, gave rise to ferroelectric hysteresis loops, which was explained by the perovskite phase formation starting from the surface layers.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalFerroelectrics
Volume269
DOIs
Publication statusPublished - 2002 Jan 1

Keywords

  • Fatigue
  • Low-temperature processing
  • Oxygen-plasma
  • PZT
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Lee, C. E., Jang, H. K., Park, E. R., Kang, E. K., Lee, S. K., & Noh, S. J. (2002). Oxygen-plasma treatment of sol-gel derived lead zirconate titanate thin films. Ferroelectrics, 269, 123-128. https://doi.org/10.1080/713716066