p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si

Hyun-Yong Yu, Masato Ishibashi, Jin Hong Park, Masaharu Kobayashi, Krishna C. Saraswat

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show ∼80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.

Original languageEnglish
Pages (from-to)675-677
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
Publication statusPublished - 2009 Jul 1
Externally publishedYes

Fingerprint

Hole mobility
Gate dielectrics
Epitaxial growth
Metals
Electrodes
germanium oxide

Keywords

  • Anneal
  • Dislocation
  • Germanium
  • Heteroepitaxy
  • Hydrogen
  • MOSFET
  • Selective growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si. / Yu, Hyun-Yong; Ishibashi, Masato; Park, Jin Hong; Kobayashi, Masaharu; Saraswat, Krishna C.

In: IEEE Electron Device Letters, Vol. 30, No. 6, 01.07.2009, p. 675-677.

Research output: Contribution to journalArticle

Yu, H-Y, Ishibashi, M, Park, JH, Kobayashi, M & Saraswat, KC 2009, 'p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si', IEEE Electron Device Letters, vol. 30, no. 6, pp. 675-677. https://doi.org/10.1109/LED.2009.2019847
Yu, Hyun-Yong ; Ishibashi, Masato ; Park, Jin Hong ; Kobayashi, Masaharu ; Saraswat, Krishna C. / p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si. In: IEEE Electron Device Letters. 2009 ; Vol. 30, No. 6. pp. 675-677.
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