p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si

Hyun-Yong Yu, Masato Ishibashi, Jin Hong Park, Masaharu Kobayashi, Krishna C. Saraswat

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show ∼80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.

Original languageEnglish
Pages (from-to)675-677
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
Publication statusPublished - 2009 Jul 1
Externally publishedYes

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Keywords

  • Anneal
  • Dislocation
  • Germanium
  • Heteroepitaxy
  • Hydrogen
  • MOSFET
  • Selective growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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