p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si

Hyun Yong Yu; Masato Ishibashi; Jin Hong Park; Masaharu Kobayashi; Krishna C. Saraswat

doi:10.1109/LED.2009.2019847

p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si

Hyun Yong Yu, Masato Ishibashi, Jin Hong Park, Masaharu Kobayashi, Krishna C. Saraswat

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO₂ by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO₂ and Al₂O₃ and Al metal gate electrode. Fabricated devices show ∼80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.

Original language	English
Pages (from-to)	675-677
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/LED.2009.2019847
Publication status	Published - 2009
Externally published	Yes

Keywords

Anneal
Dislocation
Germanium
Heteroepitaxy
Hydrogen
MOSFET
Selective growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2009.2019847

Cite this

@article{4b16ecbabb5648d9a92ad677d5ffeaea,

title = "p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si",

abstract = "We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show ∼80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.",

keywords = "Anneal, Dislocation, Germanium, Heteroepitaxy, Hydrogen, MOSFET, Selective growth",

author = "Yu, {Hyun Yong} and Masato Ishibashi and Park, {Jin Hong} and Masaharu Kobayashi and Saraswat, {Krishna C.}",

note = "Funding Information: Manuscript received February 23, 2009; revised March 22, 2009. Current version published May 27, 2009. This work was supported in part by MARCO Interconnect Focus Centers and in part by the Stanford University INMP program. The review of this letter was arranged by Editor M. Ostling.",

year = "2009",

doi = "10.1109/LED.2009.2019847",

language = "English",

volume = "30",

pages = "675--677",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si

AU - Yu, Hyun Yong

AU - Ishibashi, Masato

AU - Park, Jin Hong

AU - Kobayashi, Masaharu

AU - Saraswat, Krishna C.

N1 - Funding Information: Manuscript received February 23, 2009; revised March 22, 2009. Current version published May 27, 2009. This work was supported in part by MARCO Interconnect Focus Centers and in part by the Stanford University INMP program. The review of this letter was arranged by Editor M. Ostling.

PY - 2009

Y1 - 2009

N2 - We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show ∼80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.

AB - We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show ∼80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.

KW - Anneal

KW - Dislocation

KW - Germanium

KW - Heteroepitaxy

KW - Hydrogen

KW - MOSFET

KW - Selective growth

UR - http://www.scopus.com/inward/record.url?scp=67649306727&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2019847

DO - 10.1109/LED.2009.2019847

M3 - Article

AN - SCOPUS:67649306727

SN - 0741-3106

VL - 30

SP - 675

EP - 677

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this