We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show ∼80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 2009|
- Selective growth
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering