P-type semiconducting dendrimers bearing thiophenyl peripheral moieties for organic field effect transistors

Kyung Hwan Kim, Zhenguo Chi, Min Ju Cho, Dong Hoon Choi, Han Saem Kang, Mi Yeon Cho, Jinsoo Joo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

First generation thiophene-labeled conjugated dendrimers have been synthesized through the Heck coupling reaction between the 5-hexyl-5-propenyl thiophene derivative and 1, 2, 4, 5-tetrabromo-benzene as the core. They display a p -type semiconducting behavior and a considerably better solubility than the linear conjugated oligothiophene. Two crystalline dendrimers such as 4(HPBT)-benzene and 4(HPTT)-benzene showed carrier mobilities as high as 6.2× 10-3 and 2.4× 10-4 cm2 V-1 s-1, respectively.

Original languageEnglish
Article number202109
JournalApplied Physics Letters
Volume89
Issue number20
DOIs
Publication statusPublished - 2006 Nov 23

Fingerprint

dendrimers
field effect transistors
benzene
thiophenes
carrier mobility
solubility

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

P-type semiconducting dendrimers bearing thiophenyl peripheral moieties for organic field effect transistors. / Kim, Kyung Hwan; Chi, Zhenguo; Cho, Min Ju; Choi, Dong Hoon; Kang, Han Saem; Cho, Mi Yeon; Joo, Jinsoo.

In: Applied Physics Letters, Vol. 89, No. 20, 202109, 23.11.2006.

Research output: Contribution to journalArticle

Kim, Kyung Hwan ; Chi, Zhenguo ; Cho, Min Ju ; Choi, Dong Hoon ; Kang, Han Saem ; Cho, Mi Yeon ; Joo, Jinsoo. / P-type semiconducting dendrimers bearing thiophenyl peripheral moieties for organic field effect transistors. In: Applied Physics Letters. 2006 ; Vol. 89, No. 20.
@article{af845a36565645e9ab55e07f5b49651a,
title = "P-type semiconducting dendrimers bearing thiophenyl peripheral moieties for organic field effect transistors",
abstract = "First generation thiophene-labeled conjugated dendrimers have been synthesized through the Heck coupling reaction between the 5-hexyl-5-propenyl thiophene derivative and 1, 2, 4, 5-tetrabromo-benzene as the core. They display a p -type semiconducting behavior and a considerably better solubility than the linear conjugated oligothiophene. Two crystalline dendrimers such as 4(HPBT)-benzene and 4(HPTT)-benzene showed carrier mobilities as high as 6.2× 10-3 and 2.4× 10-4 cm2 V-1 s-1, respectively.",
author = "Kim, {Kyung Hwan} and Zhenguo Chi and Cho, {Min Ju} and Choi, {Dong Hoon} and Kang, {Han Saem} and Cho, {Mi Yeon} and Jinsoo Joo",
year = "2006",
month = "11",
day = "23",
doi = "10.1063/1.2388244",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - P-type semiconducting dendrimers bearing thiophenyl peripheral moieties for organic field effect transistors

AU - Kim, Kyung Hwan

AU - Chi, Zhenguo

AU - Cho, Min Ju

AU - Choi, Dong Hoon

AU - Kang, Han Saem

AU - Cho, Mi Yeon

AU - Joo, Jinsoo

PY - 2006/11/23

Y1 - 2006/11/23

N2 - First generation thiophene-labeled conjugated dendrimers have been synthesized through the Heck coupling reaction between the 5-hexyl-5-propenyl thiophene derivative and 1, 2, 4, 5-tetrabromo-benzene as the core. They display a p -type semiconducting behavior and a considerably better solubility than the linear conjugated oligothiophene. Two crystalline dendrimers such as 4(HPBT)-benzene and 4(HPTT)-benzene showed carrier mobilities as high as 6.2× 10-3 and 2.4× 10-4 cm2 V-1 s-1, respectively.

AB - First generation thiophene-labeled conjugated dendrimers have been synthesized through the Heck coupling reaction between the 5-hexyl-5-propenyl thiophene derivative and 1, 2, 4, 5-tetrabromo-benzene as the core. They display a p -type semiconducting behavior and a considerably better solubility than the linear conjugated oligothiophene. Two crystalline dendrimers such as 4(HPBT)-benzene and 4(HPTT)-benzene showed carrier mobilities as high as 6.2× 10-3 and 2.4× 10-4 cm2 V-1 s-1, respectively.

UR - http://www.scopus.com/inward/record.url?scp=33751111425&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751111425&partnerID=8YFLogxK

U2 - 10.1063/1.2388244

DO - 10.1063/1.2388244

M3 - Article

AN - SCOPUS:33751111425

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202109

ER -