P-type Si nanowire (NW)-based nano-floating gate memory (NFGM) with Au nanoparticles (NPs) embedded in Al2O3 gate layers is characterized in this study. The electrical characteristics of a representative p-type Si NW-based NFGM exhibit a counterclockwise hysteresis loop indicating the trapping and detrapping of electrons in the Au NP nodes of the NFGM device. The threshold voltage shift of the device is 5.4 V and the device has good retention over a lapse of time of 5 × 104 s. On the other hand, the p-type Si NW-based top-gate device without any Au NPs does not exhibit any significant threshold voltage shift. This observation reveals that the memory behavior of the p-type Si NW-based NFGM is due to the trapping and detrapping of charge carriers in the Au NPs.
|Number of pages||5|
|Journal||Solid State Sciences|
|Publication status||Published - 2010 May 1|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics