P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al2O3 gate layers

Changjoon Yoon; Kyoungah Cho; Jae Hyun Lee; Dongmok Whang; Byung Moo Moon; Sangsig Kim

doi:10.1016/j.solidstatesciences.2010.02.026

P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al₂O₃ gate layers

Changjoon Yoon, Kyoungah Cho, Jae Hyun Lee, Dongmok Whang, Byung Moo Moon, Sangsig Kim

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

P-type Si nanowire (NW)-based nano-floating gate memory (NFGM) with Au nanoparticles (NPs) embedded in Al₂O₃ gate layers is characterized in this study. The electrical characteristics of a representative p-type Si NW-based NFGM exhibit a counterclockwise hysteresis loop indicating the trapping and detrapping of electrons in the Au NP nodes of the NFGM device. The threshold voltage shift of the device is 5.4 V and the device has good retention over a lapse of time of 5 × 10⁴ s. On the other hand, the p-type Si NW-based top-gate device without any Au NPs does not exhibit any significant threshold voltage shift. This observation reveals that the memory behavior of the p-type Si NW-based NFGM is due to the trapping and detrapping of charge carriers in the Au NPs.

Original language	English
Pages (from-to)	745-749
Number of pages	5
Journal	Solid State Sciences
Volume	12
Issue number	5
DOIs	https://doi.org/10.1016/j.solidstatesciences.2010.02.026
Publication status	Published - 2010 May

Keywords

Memory
Nanoparticle
Nanowire
Silicon

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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Yoon, C., Cho, K., Lee, J. H., Whang, D., Moon, B. M., & Kim, S. (2010). P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al₂O₃ gate layers. Solid State Sciences, 12(5), 745-749. https://doi.org/10.1016/j.solidstatesciences.2010.02.026

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title = "P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al2O3 gate layers",

abstract = "P-type Si nanowire (NW)-based nano-floating gate memory (NFGM) with Au nanoparticles (NPs) embedded in Al2O3 gate layers is characterized in this study. The electrical characteristics of a representative p-type Si NW-based NFGM exhibit a counterclockwise hysteresis loop indicating the trapping and detrapping of electrons in the Au NP nodes of the NFGM device. The threshold voltage shift of the device is 5.4 V and the device has good retention over a lapse of time of 5 × 104 s. On the other hand, the p-type Si NW-based top-gate device without any Au NPs does not exhibit any significant threshold voltage shift. This observation reveals that the memory behavior of the p-type Si NW-based NFGM is due to the trapping and detrapping of charge carriers in the Au NPs.",

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author = "Changjoon Yoon and Kyoungah Cho and Lee, {Jae Hyun} and Dongmok Whang and Moon, {Byung Moo} and Sangsig Kim",

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AU - Whang, Dongmok

AU - Moon, Byung Moo

AU - Kim, Sangsig

PY - 2010/5

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N2 - P-type Si nanowire (NW)-based nano-floating gate memory (NFGM) with Au nanoparticles (NPs) embedded in Al2O3 gate layers is characterized in this study. The electrical characteristics of a representative p-type Si NW-based NFGM exhibit a counterclockwise hysteresis loop indicating the trapping and detrapping of electrons in the Au NP nodes of the NFGM device. The threshold voltage shift of the device is 5.4 V and the device has good retention over a lapse of time of 5 × 104 s. On the other hand, the p-type Si NW-based top-gate device without any Au NPs does not exhibit any significant threshold voltage shift. This observation reveals that the memory behavior of the p-type Si NW-based NFGM is due to the trapping and detrapping of charge carriers in the Au NPs.

AB - P-type Si nanowire (NW)-based nano-floating gate memory (NFGM) with Au nanoparticles (NPs) embedded in Al2O3 gate layers is characterized in this study. The electrical characteristics of a representative p-type Si NW-based NFGM exhibit a counterclockwise hysteresis loop indicating the trapping and detrapping of electrons in the Au NP nodes of the NFGM device. The threshold voltage shift of the device is 5.4 V and the device has good retention over a lapse of time of 5 × 104 s. On the other hand, the p-type Si NW-based top-gate device without any Au NPs does not exhibit any significant threshold voltage shift. This observation reveals that the memory behavior of the p-type Si NW-based NFGM is due to the trapping and detrapping of charge carriers in the Au NPs.

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