Abstract
We demonstrated carbon nanotube (CNT) field emitters made by a filtration-transfer method. They showed low turn-on and threshold electric fields, which is attributed to the advantages of this method, such as the high density of emission sites, good electrical contact, strong mechanical adhesion, and low contamination of CNTs tips. In addition, the field emitters showed very stable emission stability for long operation time at the acceleration condition. Moreover, we realized flexible CNT emitters using the fabrication technique.
| Original language | English |
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| Title of host publication | 23rd International Vacuum Nanoelectronics Conference, IVNC 2010 |
| Pages | 82-83 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 |
| Event | 23rd International Vacuum Nanoelectronics Conference, IVNC 2010 - Palo Alto, CA, United States Duration: 2010 Jul 26 → 2010 Jul 30 |
Publication series
| Name | 23rd International Vacuum Nanoelectronics Conference, IVNC 2010 |
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Other
| Other | 23rd International Vacuum Nanoelectronics Conference, IVNC 2010 |
|---|---|
| Country | United States |
| City | Palo Alto, CA |
| Period | 10/7/26 → 10/7/30 |
Keywords
- Carbon nanotube
- Field emission
- Filtrationtransfer method
- Flexible emitter
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Shin, D. H., Song, Y., Sun, Y., Lee, J. Y., Kim, B., Shin, J. H., Jung, S. I., & Lee, C. J. (2010). P1-30: CNT field emitters made by a filtration-transfer method. In 23rd International Vacuum Nanoelectronics Conference, IVNC 2010 (pp. 82-83). [5563166] (23rd International Vacuum Nanoelectronics Conference, IVNC 2010). https://doi.org/10.1109/IVNC.2010.5563166