Paired gap states in a semiconducting carbon nanotube: Deep and shallow levels

Sungjun Lee, Gunn Kim, Hajin Kim, Byoung Young Choi, Jhinhwan Lee, Byoung Wook Jeong, Jisoon Ihm, Young Kuk, Se-Jong Kahng

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Several paired, localized gap states were observed in semiconducting single-wall carbon nanotubes using spatially resolved scanning tunneling spectroscopy. A pair of gap states is found far from the band edges, forming deep levels, while the other pair is located near the band edges, forming shallow levels. With the help of a first-principles study, the former is explained by a vacancy-adatom complex while the latter is explained by a pentagon-heptagon structure. Our experimental observation indicates that the presence of the gap states provides a means to perform local band-gap engineering as well as doping without impurity substitution.

Original languageEnglish
Article number166402
JournalPhysical Review Letters
Volume95
Issue number16
DOIs
Publication statusPublished - 2005 Oct 14

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carbon nanotubes
adatoms
engineering
substitutes
impurities
scanning
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Paired gap states in a semiconducting carbon nanotube : Deep and shallow levels. / Lee, Sungjun; Kim, Gunn; Kim, Hajin; Choi, Byoung Young; Lee, Jhinhwan; Jeong, Byoung Wook; Ihm, Jisoon; Kuk, Young; Kahng, Se-Jong.

In: Physical Review Letters, Vol. 95, No. 16, 166402, 14.10.2005.

Research output: Contribution to journalArticle

Lee, Sungjun ; Kim, Gunn ; Kim, Hajin ; Choi, Byoung Young ; Lee, Jhinhwan ; Jeong, Byoung Wook ; Ihm, Jisoon ; Kuk, Young ; Kahng, Se-Jong. / Paired gap states in a semiconducting carbon nanotube : Deep and shallow levels. In: Physical Review Letters. 2005 ; Vol. 95, No. 16.
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