TY - JOUR
T1 - Paired gap states in a semiconducting carbon nanotube
T2 - Deep and shallow levels
AU - Lee, Sungjun
AU - Kim, Gunn
AU - Kim, Hajin
AU - Choi, Byoung Young
AU - Lee, Jhinhwan
AU - Jeong, Byoung Wook
AU - Ihm, Jisoon
AU - Kuk, Young
AU - Kahng, Se Jong
PY - 2005/10/14
Y1 - 2005/10/14
N2 - Several paired, localized gap states were observed in semiconducting single-wall carbon nanotubes using spatially resolved scanning tunneling spectroscopy. A pair of gap states is found far from the band edges, forming deep levels, while the other pair is located near the band edges, forming shallow levels. With the help of a first-principles study, the former is explained by a vacancy-adatom complex while the latter is explained by a pentagon-heptagon structure. Our experimental observation indicates that the presence of the gap states provides a means to perform local band-gap engineering as well as doping without impurity substitution.
AB - Several paired, localized gap states were observed in semiconducting single-wall carbon nanotubes using spatially resolved scanning tunneling spectroscopy. A pair of gap states is found far from the band edges, forming deep levels, while the other pair is located near the band edges, forming shallow levels. With the help of a first-principles study, the former is explained by a vacancy-adatom complex while the latter is explained by a pentagon-heptagon structure. Our experimental observation indicates that the presence of the gap states provides a means to perform local band-gap engineering as well as doping without impurity substitution.
UR - http://www.scopus.com/inward/record.url?scp=28844459495&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.95.166402
DO - 10.1103/PhysRevLett.95.166402
M3 - Article
AN - SCOPUS:28844459495
SN - 0031-9007
VL - 95
JO - Physical Review Letters
JF - Physical Review Letters
IS - 16
M1 - 166402
ER -