Parameter modeling for nanopore Ionic field effect Transistors in 3-D device simulation

Jun Mo Park, Honggu Chun, Y. Eugene Pak, Byung Gook Park, Jong Ho Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An Ion Field Effect Transistor (IFET) with nanopore structure was modeled in a conventional 3-dimensional (3-D) device simulator to understand current-voltage (I -V ) characteristics and underlying physics of the device. Since the nanopore was filled with positive ions (K+) ions due to the negative interface charge on the insulator surface and negative gate bias condition, we could successfully simulate the IFET structure using modified p -type silicon to mimic KCl solution. We used p -type silicon with a doping concentration of 6.022 × 1016 cm-3 which has the same concentration of positive carriers (hole) as in 10-4 M KCl. By controlling gate electric field effect on the mobility, the I -V curves obtained by the parameter modeling matched very well with the measured data. In addition, the decrease of |Vth| with increasing VDS was physically analyzed,.

Original languageEnglish
Pages (from-to)8171-8175
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number11
DOIs
Publication statusPublished - 2014 Nov 1

Fingerprint

Nanopores
Field effect transistors
field effect transistors
Silicon
Ions
Equipment and Supplies
Electric field effects
ions
simulation
silicon
positive ions
simulators
Physics
Simulators
Positive ions
Doping (additives)
insulators
physics
electric fields
Electric potential

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Parameter modeling for nanopore Ionic field effect Transistors in 3-D device simulation. / Park, Jun Mo; Chun, Honggu; Eugene Pak, Y.; Park, Byung Gook; Lee, Jong Ho.

In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 11, 01.11.2014, p. 8171-8175.

Research output: Contribution to journalArticle

Park, Jun Mo ; Chun, Honggu ; Eugene Pak, Y. ; Park, Byung Gook ; Lee, Jong Ho. / Parameter modeling for nanopore Ionic field effect Transistors in 3-D device simulation. In: Journal of Nanoscience and Nanotechnology. 2014 ; Vol. 14, No. 11. pp. 8171-8175.
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