Parameter modeling for nanopore Ionic field effect Transistors in 3-D device simulation

Jun Mo Park, Honggu Chun, Y. Eugene Pak, Byung Gook Park, Jong Ho Lee

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


An Ion Field Effect Transistor (IFET) with nanopore structure was modeled in a conventional 3-dimensional (3-D) device simulator to understand current-voltage (I -V ) characteristics and underlying physics of the device. Since the nanopore was filled with positive ions (K+) ions due to the negative interface charge on the insulator surface and negative gate bias condition, we could successfully simulate the IFET structure using modified p -type silicon to mimic KCl solution. We used p -type silicon with a doping concentration of 6.022 × 1016 cm-3 which has the same concentration of positive carriers (hole) as in 10-4 M KCl. By controlling gate electric field effect on the mobility, the I -V curves obtained by the parameter modeling matched very well with the measured data. In addition, the decrease of |Vth| with increasing VDS was physically analyzed,.

Original languageEnglish
Pages (from-to)8171-8175
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number11
Publication statusPublished - 2014 Nov 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering


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