Parasitic bipolar junction transistors in a floating-gate MOSFET for fluorescence detection

Kyeong S. Shin, Kyeong K. Paek, Jung ho Park, Tae Song Kim, Byeong Kwon Ju, Ji Yoon Kang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.

Original languageEnglish
Pages (from-to)581-583
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number7
DOIs
Publication statusPublished - 2007 Jul 1

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Bipolar transistors
Fluorescence
Diodes
Detectors
Photodetectors
Photocurrents

Keywords

  • Biosensors
  • Bipolar junction transistor (BJT)
  • Fluorescence
  • Microfluidic
  • MOSFET
  • Photodiode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Parasitic bipolar junction transistors in a floating-gate MOSFET for fluorescence detection. / Shin, Kyeong S.; Paek, Kyeong K.; Park, Jung ho; Kim, Tae Song; Ju, Byeong Kwon; Kang, Ji Yoon.

In: IEEE Electron Device Letters, Vol. 28, No. 7, 01.07.2007, p. 581-583.

Research output: Contribution to journalArticle

Shin, Kyeong S. ; Paek, Kyeong K. ; Park, Jung ho ; Kim, Tae Song ; Ju, Byeong Kwon ; Kang, Ji Yoon. / Parasitic bipolar junction transistors in a floating-gate MOSFET for fluorescence detection. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 7. pp. 581-583.
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