Parasitic p-n junctions formed at V-pit defects in p-GaN

P. S. Vergeles, E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, A. V. Chernykh, A. A. Vasilev, A. I. Kochkova, In Hwan Lee, Stephen J. Pearton

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1 Citation (Scopus)


The luminescent and recombination properties of V-pit defects in p-GaN(Mg) grown by metalorganic chemical vapor deposition (MOCVD) were studied by scanning electron microscopy (SEM) in the secondary electron, cathodoluminescence (CL), and electron beam induced current (EBIC) modes, combined with CL spectra measurements and EBIC collection efficiency measurements. Similar studies were performed on low-dislocation-density freestanding n-GaN crystals. For MOCVD p-GaN films, the SEM investigations were supplemented by capacitance-voltage, current-voltage, deep level transient spectroscopy analysis with Ni Schottky diode, and Ohmic contacts. These experiments show that V-pits in p-GaN increase the leakage current of Schottky diodes, as in n-GaN films and crystals. EBIC imaging and EBIC collection efficiency results suggest that in the region of V-pits, a parasitic p-n junction is formed. We also observe that, in V-pits, the CL spectra the contribution of the 3.2 eV defect band is strongly enhanced compared to the 3 eV blue CL band that dominates the spectra.

Original languageEnglish
Article number155702
JournalJournal of Applied Physics
Issue number15
Publication statusPublished - 2021 Apr 21

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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