Passivation of semi-insulating polycrystalline cdznte films

Ki Hyun Kim, Jae Ho Won, Shin Hang Cho, Jong Hee Suh, Pyong Kon Cho, Jinki Hong, Sun Ung Kim, You Ree Han

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Surface effects play an important role in the overall performance of X-ray detector. The effects of passivation with (NH4)2S on semi-insulating polycrystalline CdZnTe thick films were analyzed with X-ray photoelectron spectroscopy (XPS), photoconductive decay (PCD), noise power spectrum and pulse height spectra measurements. Sulfur passivation with (HN 4)2S effectively removes the Teoxide layers on the CdZnTe surface, reduces the surface leakage current and gives higher energy resolution by suppressing 1/f noise.

Original languageEnglish
Pages (from-to)317-321
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number1
DOIs
Publication statusPublished - 2008 Jul

Keywords

  • 1/f noise
  • CdTeS
  • Heterojunction
  • Inter-pixel resistance
  • Leakage current
  • Semi-insulating CdZnTe
  • Sulfur passivation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Passivation of semi-insulating polycrystalline cdznte films'. Together they form a unique fingerprint.

  • Cite this

    Kim, K. H., Won, J. H., Cho, S. H., Suh, J. H., Cho, P. K., Hong, J., Kim, S. U., & Han, Y. R. (2008). Passivation of semi-insulating polycrystalline cdznte films. Journal of the Korean Physical Society, 53(1), 317-321. https://doi.org/10.3938/jkps.53.317