Passivation quality control in poly-Si/SiOx/c-Si passivated contact solar cells with 734 mV implied open circuit voltage

Hyun Jung Park, Hyomin Park, Se Jin Park, Soohyun Bae, Hyunho Kim, Jee Woong Yang, Ji Yeon Hyun, Chang Hyun Lee, Seung Hyun Shin, Yoonmook Kang, Hae Seok Lee, Donghwan Kim

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


Passivation quality of poly-Si contacts with different phosphorus doping concentration were investigated in this study. Intrinsic poly-Si layers were deposited by LPCVD on a tunnel oxide surface, followed by n + poly-Si doping and hydrogenation. For lightly doped poly-Si contacts with phosphorus concentration of 2.1×1019cm−3, higher temperatures and longer times increased iVOC achieving maximum value of 734 mV, as poly-Si grain size increases from 13 nm to 40 nm. However, for heavily doped poly-Si contacts with phosphorus concentration of 1.1×1020cm−3, iVOC decreased from 731 mV to 696 mV as annealing time increased from 10 to 60 min because Auger recombination rate increased from 9.3fA/cm2 to 21.6fA/cm2 as phosphorus in-diffusion occurs. The contact resistance of poly-Si contacts was also investigated to achieve a high fill factor. Finally, a poly-Si/SiOx/c-Si passivated contact solar cell using a poly-Si contact on the back and boron diffused emitter on the front was fabricated. As a result, high efficiency of 21.1% solar cell was achieved with VOC of 665 mV, JSC of 40.6 mA/cm2, and fill factor of 78.3%.

Original languageEnglish
Pages (from-to)21-26
Number of pages6
JournalSolar Energy Materials and Solar Cells
Publication statusPublished - 2019 Jan


  • High efficiency
  • N-type silicon
  • Passivated contact
  • Polysilicon
  • Solar cell
  • Tunnel oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films


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