Passivation quality control in poly-Si/SiOx/c-Si passivated contact solar cells with 734 mV implied open circuit voltage

Hyun Jung Park, Hyomin Park, Se Jin Park, Soohyun Bae, Hyunho Kim, Jee Woong Yang, Ji Yeon Hyun, Chang Hyun Lee, Seung Hyun Shin, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Passivation quality of poly-Si contacts with different phosphorus doping concentration were investigated in this study. Intrinsic poly-Si layers were deposited by LPCVD on a tunnel oxide surface, followed by n + poly-Si doping and hydrogenation. For lightly doped poly-Si contacts with phosphorus concentration of 2.1×1019cm−3, higher temperatures and longer times increased iVOC achieving maximum value of 734 mV, as poly-Si grain size increases from 13 nm to 40 nm. However, for heavily doped poly-Si contacts with phosphorus concentration of 1.1×1020cm−3, iVOC decreased from 731 mV to 696 mV as annealing time increased from 10 to 60 min because Auger recombination rate increased from 9.3fA/cm2 to 21.6fA/cm2 as phosphorus in-diffusion occurs. The contact resistance of poly-Si contacts was also investigated to achieve a high fill factor. Finally, a poly-Si/SiOx/c-Si passivated contact solar cell using a poly-Si contact on the back and boron diffused emitter on the front was fabricated. As a result, high efficiency of 21.1% solar cell was achieved with VOC of 665 mV, JSC of 40.6 mA/cm2, and fill factor of 78.3%.

Original languageEnglish
Pages (from-to)21-26
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume189
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Open circuit voltage
Polysilicon
Passivation
Quality control
Solar cells
Phosphorus
Doping (additives)
Boron
Contact resistance
Volatile organic compounds
Oxides
Hydrogenation
Tunnels
Annealing

Keywords

  • High efficiency
  • N-type silicon
  • Passivated contact
  • Polysilicon
  • Solar cell
  • Tunnel oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

Passivation quality control in poly-Si/SiOx/c-Si passivated contact solar cells with 734 mV implied open circuit voltage. / Park, Hyun Jung; Park, Hyomin; Park, Se Jin; Bae, Soohyun; Kim, Hyunho; Yang, Jee Woong; Hyun, Ji Yeon; Lee, Chang Hyun; Shin, Seung Hyun; Kang, Yoon Mook; Lee, Haeseok; Kim, Donghwan.

In: Solar Energy Materials and Solar Cells, Vol. 189, 01.01.2019, p. 21-26.

Research output: Contribution to journalArticle

Park, Hyun Jung ; Park, Hyomin ; Park, Se Jin ; Bae, Soohyun ; Kim, Hyunho ; Yang, Jee Woong ; Hyun, Ji Yeon ; Lee, Chang Hyun ; Shin, Seung Hyun ; Kang, Yoon Mook ; Lee, Haeseok ; Kim, Donghwan. / Passivation quality control in poly-Si/SiOx/c-Si passivated contact solar cells with 734 mV implied open circuit voltage. In: Solar Energy Materials and Solar Cells. 2019 ; Vol. 189. pp. 21-26.
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abstract = "Passivation quality of poly-Si contacts with different phosphorus doping concentration were investigated in this study. Intrinsic poly-Si layers were deposited by LPCVD on a tunnel oxide surface, followed by n + poly-Si doping and hydrogenation. For lightly doped poly-Si contacts with phosphorus concentration of 2.1×1019cm−3, higher temperatures and longer times increased iVOC achieving maximum value of 734 mV, as poly-Si grain size increases from 13 nm to 40 nm. However, for heavily doped poly-Si contacts with phosphorus concentration of 1.1×1020cm−3, iVOC decreased from 731 mV to 696 mV as annealing time increased from 10 to 60 min because Auger recombination rate increased from 9.3fA/cm2 to 21.6fA/cm2 as phosphorus in-diffusion occurs. The contact resistance of poly-Si contacts was also investigated to achieve a high fill factor. Finally, a poly-Si/SiOx/c-Si passivated contact solar cell using a poly-Si contact on the back and boron diffused emitter on the front was fabricated. As a result, high efficiency of 21.1{\%} solar cell was achieved with VOC of 665 mV, JSC of 40.6 mA/cm2, and fill factor of 78.3{\%}.",
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author = "Park, {Hyun Jung} and Hyomin Park and Park, {Se Jin} and Soohyun Bae and Hyunho Kim and Yang, {Jee Woong} and Hyun, {Ji Yeon} and Lee, {Chang Hyun} and Shin, {Seung Hyun} and Kang, {Yoon Mook} and Haeseok Lee and Donghwan Kim",
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AU - Park, Hyun Jung

AU - Park, Hyomin

AU - Park, Se Jin

AU - Bae, Soohyun

AU - Kim, Hyunho

AU - Yang, Jee Woong

AU - Hyun, Ji Yeon

AU - Lee, Chang Hyun

AU - Shin, Seung Hyun

AU - Kang, Yoon Mook

AU - Lee, Haeseok

AU - Kim, Donghwan

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AB - Passivation quality of poly-Si contacts with different phosphorus doping concentration were investigated in this study. Intrinsic poly-Si layers were deposited by LPCVD on a tunnel oxide surface, followed by n + poly-Si doping and hydrogenation. For lightly doped poly-Si contacts with phosphorus concentration of 2.1×1019cm−3, higher temperatures and longer times increased iVOC achieving maximum value of 734 mV, as poly-Si grain size increases from 13 nm to 40 nm. However, for heavily doped poly-Si contacts with phosphorus concentration of 1.1×1020cm−3, iVOC decreased from 731 mV to 696 mV as annealing time increased from 10 to 60 min because Auger recombination rate increased from 9.3fA/cm2 to 21.6fA/cm2 as phosphorus in-diffusion occurs. The contact resistance of poly-Si contacts was also investigated to achieve a high fill factor. Finally, a poly-Si/SiOx/c-Si passivated contact solar cell using a poly-Si contact on the back and boron diffused emitter on the front was fabricated. As a result, high efficiency of 21.1% solar cell was achieved with VOC of 665 mV, JSC of 40.6 mA/cm2, and fill factor of 78.3%.

KW - High efficiency

KW - N-type silicon

KW - Passivated contact

KW - Polysilicon

KW - Solar cell

KW - Tunnel oxide

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