Patterning Superatom Dopants on Transition Metal Dichalcogenides

Jaeeun Yu, Chul-Ho Lee, Delphine Bouilly, Minyong Han, Philip Kim, Michael L. Steigerwald, Xavier Roy, Colin Nuckolls

Research output: Contribution to journalArticle

30 Citations (Scopus)


This study describes a new and simple approach to dope two-dimensional transition metal dichalcogenides (TMDCs) using the superatom Co6Se8(PEt3)6 as the electron dopant. Semiconducting TMDCs are wired into field-effect transistor devices and then immersed into a solution of these superatoms. The degree of doping is determined by the concentration of the superatoms in solution and by the length of time the films are immersed in the dopant solution. Using this chemical approach, we are able to turn mono- and few-layer MoS2 samples from moderately to heavily electron-doped states. The same approach applied on WSe2 films changes their characteristics from hole transporting to electron transporting. Moreover, we show that the superatom doping can be patterned on specific areas of TMDC films. To illustrate the power of this technique, we demonstrate the fabrication of a lateral p-n junction by selectively doping only a portion of the channel in a WSe2 device. Finally, encapsulation of the doped films with crystalline hydrocarbon layers stabilizes their properties in an ambient environment.

Original languageEnglish
Pages (from-to)3385-3389
Number of pages5
JournalNano Letters
Issue number5
Publication statusPublished - 2016 May 11


  • chemical doping
  • encapsulation
  • lateral junction
  • superatom
  • Transition metal dichalcogenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

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  • Cite this

    Yu, J., Lee, C-H., Bouilly, D., Han, M., Kim, P., Steigerwald, M. L., Roy, X., & Nuckolls, C. (2016). Patterning Superatom Dopants on Transition Metal Dichalcogenides. Nano Letters, 16(5), 3385-3389.