Peak channel temperature of graphene-based transistors

Geunwoo Ko, Younghun Jung, Ji Hyun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, graphene was mechanically deposited on SiO 2/Si substrate, followed by ohmic metallization using electron-beam lithography. Finite element analysis was employed to characterize the operating temperature of graphene-based devices using the experimentally determined currentvoltage data. The temperature of the hottest spot where the underlying SiO 2 layer was 300 nm thick was elevated up to about 70 °C at a 10 mW dissipated power. However, the operating temperature dropped to about 50 °C when the 300 nm thick SiO 2 layer was replaced with a 20 nm thick SiO 2 layer. Thermal management is very critical in the reliability of graphene-based high speed electronic devices because the high operating temperature can degrade the device performance.

Original languageEnglish
Pages (from-to)4889-4892
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume10
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1

    Fingerprint

Keywords

  • Channel temperature
  • Graphene
  • Transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this