Penetration effects of high-energy protons in GaN

A micro-raman spectroscopy study

Hong Yeol Kim, Jaime A. Freitas, Ji Hyun Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Micro-Raman spectroscopy was used to examine changes of the structural and electrical properties of GaN templates submitted to high-energy proton irradiation. The locations of larger structurally damaged regions, for each proton irradiation condition, were determined by monitoring the variations of the quasilongitudinal optical phonon frequency. We observed that protons generated defect clusters, through collisions with lattice atoms, and act as carrier traps. The experimental results showed a reduction of the carrier concentrations around the estimated penetration depths for specific proton energies, which are in good agreement with the numerical simulation results. The proton-induced damage was partially healed by a thermal annealing treatment at 900°C.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number1
DOIs
Publication statusPublished - 2011 Jan 24

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proton irradiation
proton energy
Proton irradiation
Raman spectroscopy
Protons
penetration
protons
templates
electrical properties
traps
damage
annealing
collisions
Carrier concentration
Structural properties
defects
Electric properties
Annealing
atoms
Atoms

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Penetration effects of high-energy protons in GaN : A micro-raman spectroscopy study. / Kim, Hong Yeol; Freitas, Jaime A.; Kim, Ji Hyun.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 1, 24.01.2011.

Research output: Contribution to journalArticle

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