Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites

Sang Won Bae, Kihyun Kim, Yoon Deok Han, Sung Hwan Kim, Jinsoo Joo, Ji Hoon Choi, Cheol Jin Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (Ion/off), and the dc conductivity (σdc) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect Ion/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the Ion/off was relatively low. From the measured σdc as a function of the wt.% of t-MWCNTs, the percolation threshold (pc) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the pc for the charge conduction of the t-MWCNTs composites.

Original languageEnglish
Pages (from-to)2034-2037
Number of pages4
JournalSynthetic Metals
Volume159
Issue number19-20
DOIs
Publication statusPublished - 2009 Oct

Keywords

  • Carbon nanotubes composite
  • Conductivity
  • Field-effect transistor
  • Percolation threshold
  • Thin multi-walled carbon nanotubes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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