Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites

Sang Won Bae, Kihyun Kim, Yoon Deok Han, Sung Hwan Kim, Jinsoo Joo, Ji Hoon Choi, Cheol Jin Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (Ion/off), and the dc conductivity (σdc) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect Ion/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the Ion/off was relatively low. From the measured σdc as a function of the wt.% of t-MWCNTs, the percolation threshold (pc) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the pc for the charge conduction of the t-MWCNTs composites.

Original languageEnglish
Pages (from-to)2034-2037
Number of pages4
JournalSynthetic Metals
Volume159
Issue number19-20
DOIs
Publication statusPublished - 2009 Oct 1

Fingerprint

Carbon Nanotubes
Field effect transistors
Carbon nanotubes
field effect transistors
carbon nanotubes
Thin film transistors
composite materials
thresholds
Composite materials
Ions
thin films
ions
Polymethyl Methacrylate
Current voltage characteristics
Polymethyl methacrylates
polymethyl methacrylate
conduction
conductivity
electric potential

Keywords

  • Carbon nanotubes composite
  • Conductivity
  • Field-effect transistor
  • Percolation threshold
  • Thin multi-walled carbon nanotubes

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites. / Bae, Sang Won; Kim, Kihyun; Han, Yoon Deok; Kim, Sung Hwan; Joo, Jinsoo; Choi, Ji Hoon; Lee, Cheol Jin.

In: Synthetic Metals, Vol. 159, No. 19-20, 01.10.2009, p. 2034-2037.

Research output: Contribution to journalArticle

Bae, Sang Won ; Kim, Kihyun ; Han, Yoon Deok ; Kim, Sung Hwan ; Joo, Jinsoo ; Choi, Ji Hoon ; Lee, Cheol Jin. / Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites. In: Synthetic Metals. 2009 ; Vol. 159, No. 19-20. pp. 2034-2037.
@article{c9cec9b6fc994ee5acff6ae8ffa6d2a3,
title = "Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites",
abstract = "We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (Ion/off), and the dc conductivity (σdc) were measured as a function of various weight (wt.{\%}) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect Ion/off increased rapidly for TF-FETs with a wt.{\%} of t-MWCNTs below 0.6. For the TF-FETs with a wt.{\%} of t-MWCNT above 0.6, the Ion/off was relatively low. From the measured σdc as a function of the wt.{\%} of t-MWCNTs, the percolation threshold (pc) was observed to be approximately 0.6 wt.{\%} for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the pc for the charge conduction of the t-MWCNTs composites.",
keywords = "Carbon nanotubes composite, Conductivity, Field-effect transistor, Percolation threshold, Thin multi-walled carbon nanotubes",
author = "Bae, {Sang Won} and Kihyun Kim and Han, {Yoon Deok} and Kim, {Sung Hwan} and Jinsoo Joo and Choi, {Ji Hoon} and Lee, {Cheol Jin}",
year = "2009",
month = "10",
day = "1",
doi = "10.1016/j.synthmet.2009.07.017",
language = "English",
volume = "159",
pages = "2034--2037",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "19-20",

}

TY - JOUR

T1 - Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites

AU - Bae, Sang Won

AU - Kim, Kihyun

AU - Han, Yoon Deok

AU - Kim, Sung Hwan

AU - Joo, Jinsoo

AU - Choi, Ji Hoon

AU - Lee, Cheol Jin

PY - 2009/10/1

Y1 - 2009/10/1

N2 - We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (Ion/off), and the dc conductivity (σdc) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect Ion/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the Ion/off was relatively low. From the measured σdc as a function of the wt.% of t-MWCNTs, the percolation threshold (pc) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the pc for the charge conduction of the t-MWCNTs composites.

AB - We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (Ion/off), and the dc conductivity (σdc) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect Ion/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the Ion/off was relatively low. From the measured σdc as a function of the wt.% of t-MWCNTs, the percolation threshold (pc) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the pc for the charge conduction of the t-MWCNTs composites.

KW - Carbon nanotubes composite

KW - Conductivity

KW - Field-effect transistor

KW - Percolation threshold

KW - Thin multi-walled carbon nanotubes

UR - http://www.scopus.com/inward/record.url?scp=70349501601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349501601&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2009.07.017

DO - 10.1016/j.synthmet.2009.07.017

M3 - Article

VL - 159

SP - 2034

EP - 2037

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 19-20

ER -