Performance and design considerations for high speed SiGe HBTs of f T/f max=375GHz/210GHz

Jae-Sung Rieh, Basanth Jagannathan, Huajie Chen, Kathryn Schonenberg, Shwu Jen Jeng, Marwan Khater, David Ahlgren, Greg Freeman, Seshadri Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Citations (Scopus)

Abstract

This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with f T and f max of 375GHz and 210GHz, respectively, are reported. The achieved f T of 375GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BV CEO and BV CBO are 1.4V and 5.0V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages374-377
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States
Duration: 2003 May 122003 May 16

Other

Other2003 International Conference Indium Phosphide and Related Materials
CountryUnited States
CitySanta Barbara, CA
Period03/5/1203/5/16

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

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    Rieh, J-S., Jagannathan, B., Chen, H., Schonenberg, K., Jeng, S. J., Khater, M., Ahlgren, D., Freeman, G., & Subbanna, S. (2003). Performance and design considerations for high speed SiGe HBTs of f T/f max=375GHz/210GHz In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 374-377)