Performance characterization of a silicon drift detector for gamma ray imaging

Jinhun Joung, Kisung Lee, Young Bok Ahn, Jong Hee Lee, Jihoon Kang, Jae Kuk Moon, Debora Henseler, Wilhelm Metzger, Matthias Schmand

Research output: Contribution to journalArticle

Abstract

This study examined the intrinsic performance of silicon drift detector (SDD)-based gamma detectors under a variety of conditions. The prototype detector consisted of an array of seven hexagon-shaped SDDs optically coupled to a single slab of a scintillator. The active area of the SDD sensor was 15.2 mm in diameter, as measured from one vertex to another. The detector unit (SDD array, scintillator and preamplifier circuits) was operated in a cooling chamber with a typical operating temperature of -20 °C. Nitrogen gas was supplied to the detector unit to prevent condensation. The drift time was measured using a LED pulse generation device and the longest drift time was measured to be 4.6 μsec from the edge of the sensor. The intrinsic energy resolution with a 55Fe source for direct X-ray conversion was 3% at the 5.9 keV peak. For indirect conversion, i.e. photon detection, the energy resolution for CsI(Tl) and NaΙ(Tl) was 7.9% and 8.2% with a 13 μsec and 2.71 μsec shaping time, respectively. For this indirect conversion measurement, the temperature was set to -20 °C and a 1 × 1 × 1 cm3 cube scintillator was coupled directly to the sensor. For the intrinsic spatial resolution measurement with a hole-phantom (3 × 2 mm diameter holes), the x and y directional profiles at a center hole were 2.2 and 2.1 mm in FWHM, respectively. Overall, the intrinsic performance of the SDD prototype is quite promising and advantages of this technology makes it highly feasible for use as a gamma ray detector.

Original languageEnglish
Article number5485140
Pages (from-to)931-937
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number3 PART 1
DOIs
Publication statusPublished - 2010 Jun 1

Fingerprint

Gamma rays
gamma rays
Detectors
Imaging techniques
Silicon
detectors
silicon
Phosphors
scintillation counters
sensors
Sensors
prototypes
hexagons
preamplifiers
Full width at half maximum
operating temperature
Light emitting diodes
Condensation
apexes
slabs

Keywords

  • Gamma camera
  • High resolution
  • Positioning scheme
  • Silicon drift detector
  • Solid-state detector

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Joung, J., Lee, K., Ahn, Y. B., Lee, J. H., Kang, J., Moon, J. K., ... Schmand, M. (2010). Performance characterization of a silicon drift detector for gamma ray imaging. IEEE Transactions on Nuclear Science, 57(3 PART 1), 931-937. [5485140]. https://doi.org/10.1109/TNS.2009.2038696

Performance characterization of a silicon drift detector for gamma ray imaging. / Joung, Jinhun; Lee, Kisung; Ahn, Young Bok; Lee, Jong Hee; Kang, Jihoon; Moon, Jae Kuk; Henseler, Debora; Metzger, Wilhelm; Schmand, Matthias.

In: IEEE Transactions on Nuclear Science, Vol. 57, No. 3 PART 1, 5485140, 01.06.2010, p. 931-937.

Research output: Contribution to journalArticle

Joung, J, Lee, K, Ahn, YB, Lee, JH, Kang, J, Moon, JK, Henseler, D, Metzger, W & Schmand, M 2010, 'Performance characterization of a silicon drift detector for gamma ray imaging', IEEE Transactions on Nuclear Science, vol. 57, no. 3 PART 1, 5485140, pp. 931-937. https://doi.org/10.1109/TNS.2009.2038696
Joung, Jinhun ; Lee, Kisung ; Ahn, Young Bok ; Lee, Jong Hee ; Kang, Jihoon ; Moon, Jae Kuk ; Henseler, Debora ; Metzger, Wilhelm ; Schmand, Matthias. / Performance characterization of a silicon drift detector for gamma ray imaging. In: IEEE Transactions on Nuclear Science. 2010 ; Vol. 57, No. 3 PART 1. pp. 931-937.
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