Performance enhancement of pentacene and F16CuPc-based low-voltage devices using cross-linked blend gate dielectrics

Eun Sol Shin, Jeong Do Oh, Dae Kyu Kim, Young Geun Ha, Jong-Ho Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Herein is reported the fabrication and systematic comparative analysis of low-voltage organic filed-effect transistors (OFETs) and inverters using bare ZrOx dielectrics and inorganic-organic hybrid CZB (cross-linked ZrOx/1,6-bis(trimethoxysily)hexane blend) dielectrics. Solution-processed sol-gel chemistry was employed to prepare the gate dielectrics. Two active layers of p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) were deposited on the dielectrics using the neutral cluster beam deposition method. Compared with bare ZrOx-based transistors and inverters, the CZB-based devices with low leakage current and high capacitance exhibited significantly higher hole and electron carrier mobilities of (0.12→ 1.03) and (1.3 ×10-3→ 4.9 × 10-3) cm2 (Vs)-1, respectively, and enhanced gains of (9.4→ 13.3), together with large output voltage swings and sharp inversions in the voltage transfer characteristics (VTCs). The CZB-based inverters also exhibited improved noise margins due to the higher gain and better symmetry of the VTCs compared with their bare ZrOx-based counterparts. The results indicate that on the basis of the enhanced electrical properties of CZB dielectrics and the growth of high-quality crystalline semiconducting films on CZB dielectric surfaces, such high-performance devices operating at low voltage levels are promising potential components for integrated circuits.

Original languageEnglish
Article number045105
JournalJournal of Physics D: Applied Physics
Volume48
Issue number4
DOIs
Publication statusPublished - 2015 Apr 4

Fingerprint

Gate dielectrics
low voltage
inverters
augmentation
Electric potential
Transistors
Semiconducting films
electric potential
transistors
semiconducting films
Carrier mobility
Hexanes
Hexane
Leakage currents
Sol-gels
Integrated circuits
Copper
carrier mobility
high gain
electron mobility

Keywords

  • 6-bis(trimethoxysily)hexane blend
  • complementary inverter
  • cross-linked ZrO /1
  • neutral cluster beam deposition method
  • ZrO dielectrics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Performance enhancement of pentacene and F16CuPc-based low-voltage devices using cross-linked blend gate dielectrics. / Shin, Eun Sol; Oh, Jeong Do; Kim, Dae Kyu; Ha, Young Geun; Choi, Jong-Ho.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 4, 045105, 04.04.2015.

Research output: Contribution to journalArticle

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