Abstract
In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.
| Original language | English |
|---|---|
| Pages (from-to) | 390-397 |
| Number of pages | 8 |
| Journal | Superlattices and Microstructures |
| Volume | 75 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Materials Science(all)
Cite this
Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition. / Chung, Ho Young; Kim, Su Jin; Kim, Tae Geun.
In: Superlattices and Microstructures, Vol. 75, 01.01.2014, p. 390-397.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition
AU - Chung, Ho Young
AU - Kim, Su Jin
AU - Kim, Tae Geun
PY - 2014/1/1
Y1 - 2014/1/1
N2 - In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.
AB - In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.
KW - Efficiency droop
KW - Electron blocking layer
KW - Light-emitting diodes
KW - Numerical simulation
UR - http://www.scopus.com/inward/record.url?scp=84906734743&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906734743&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2014.07.046
DO - 10.1016/j.spmi.2014.07.046
M3 - Article
AN - SCOPUS:84906734743
VL - 75
SP - 390
EP - 397
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
ER -