Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Ho Young Chung; Su Jin Kim; Tae Geun Kim

doi:10.1016/j.spmi.2014.07.046

Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Ho Young Chung, Su Jin Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.

Original language	English
Pages (from-to)	390-397
Number of pages	8
Journal	Superlattices and Microstructures
Volume	75
DOIs	https://doi.org/10.1016/j.spmi.2014.07.046
Publication status	Published - 2014 Nov

Keywords

Efficiency droop
Electron blocking layer
Light-emitting diodes
Numerical simulation

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{549c3e7cb59c4f0da7eb1bc4236ddb69,

title = "Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition",

abstract = "In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.",

keywords = "Efficiency droop, Electron blocking layer, Light-emitting diodes, Numerical simulation",

author = "Chung, {Ho Young} and Kim, {Su Jin} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean Government (No. 2011-0028769 ).",

year = "2014",

month = nov,

doi = "10.1016/j.spmi.2014.07.046",

language = "English",

volume = "75",

pages = "390--397",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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TY - JOUR

T1 - Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

AU - Chung, Ho Young

AU - Kim, Su Jin

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean Government (No. 2011-0028769 ).

PY - 2014/11

Y1 - 2014/11

N2 - In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.

AB - In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.

KW - Efficiency droop

KW - Electron blocking layer

KW - Light-emitting diodes

KW - Numerical simulation

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DO - 10.1016/j.spmi.2014.07.046

M3 - Article

AN - SCOPUS:84906734743

VL - 75

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EP - 397

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -

Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Abstract

Keywords

ASJC Scopus subject areas

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