Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Ho Young Chung, Su Jin Kim, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.

Original languageEnglish
Pages (from-to)390-397
Number of pages8
JournalSuperlattices and Microstructures
Volume75
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Light emitting diodes
light emitting diodes
Electrons
Chemical analysis
electrons
injection
high current
Polarization
output
Electric potential
electric potential
polarization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition. / Chung, Ho Young; Kim, Su Jin; Kim, Tae Geun.

In: Superlattices and Microstructures, Vol. 75, 01.01.2014, p. 390-397.

Research output: Contribution to journalArticle

@article{549c3e7cb59c4f0da7eb1bc4236ddb69,
title = "Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition",
abstract = "In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.",
keywords = "Efficiency droop, Electron blocking layer, Light-emitting diodes, Numerical simulation",
author = "Chung, {Ho Young} and Kim, {Su Jin} and Kim, {Tae Geun}",
year = "2014",
month = "1",
day = "1",
doi = "10.1016/j.spmi.2014.07.046",
language = "English",
volume = "75",
pages = "390--397",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

AU - Chung, Ho Young

AU - Kim, Su Jin

AU - Kim, Tae Geun

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.

AB - In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.

KW - Efficiency droop

KW - Electron blocking layer

KW - Light-emitting diodes

KW - Numerical simulation

UR - http://www.scopus.com/inward/record.url?scp=84906734743&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906734743&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2014.07.046

DO - 10.1016/j.spmi.2014.07.046

M3 - Article

VL - 75

SP - 390

EP - 397

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -