Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Ho Young Chung, Su Jin Kim, Tae Geun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)


In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of ∼2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices.

Original languageEnglish
Pages (from-to)390-397
Number of pages8
JournalSuperlattices and Microstructures
Publication statusPublished - 2014 Jan 1


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

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