Performance improvements of quantum-wire lasers through the ground state operation

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Lasing from the ground state electron and heavy-hole (1e-1hh) transition of the semiconductor quantum wire (QWR) was achieved in the temperature range of 4.5 K to 300 K, with AlGaAs/GaAs multiple QWR structures grown by flow rate modulation epitaxy (FME). One of the lasers with cavity length of 350 μm showed fundamental transverse mode, a typical threshold current of 5 mA, ultrahigh characteristic temperature T0 ∼ 322 K above room temperature, and strikingly little wavelength shift (<0.2 nm/K) in emission spectra.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
Publication statusPublished - 2003 Feb 1
Externally publishedYes

Fingerprint

quantum wires
ground state
threshold currents
epitaxy
lasers
aluminum gallium arsenides
lasing
emission spectra
flow velocity
modulation
cavities
temperature
shift
room temperature
wavelengths
electrons

Keywords

  • Lasers
  • Semiconductor quantum wires

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Performance improvements of quantum-wire lasers through the ground state operation. / Kim, Tae Geun.

In: Journal of the Korean Physical Society, Vol. 42, No. SPEC., 01.02.2003.

Research output: Contribution to journalArticle

@article{dfc8530d9b5c49398547c551ab31ed1e,
title = "Performance improvements of quantum-wire lasers through the ground state operation",
abstract = "Lasing from the ground state electron and heavy-hole (1e-1hh) transition of the semiconductor quantum wire (QWR) was achieved in the temperature range of 4.5 K to 300 K, with AlGaAs/GaAs multiple QWR structures grown by flow rate modulation epitaxy (FME). One of the lasers with cavity length of 350 μm showed fundamental transverse mode, a typical threshold current of 5 mA, ultrahigh characteristic temperature T0 ∼ 322 K above room temperature, and strikingly little wavelength shift (<0.2 nm/K) in emission spectra.",
keywords = "Lasers, Semiconductor quantum wires",
author = "Kim, {Tae Geun}",
year = "2003",
month = "2",
day = "1",
language = "English",
volume = "42",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SPEC.",

}

TY - JOUR

T1 - Performance improvements of quantum-wire lasers through the ground state operation

AU - Kim, Tae Geun

PY - 2003/2/1

Y1 - 2003/2/1

N2 - Lasing from the ground state electron and heavy-hole (1e-1hh) transition of the semiconductor quantum wire (QWR) was achieved in the temperature range of 4.5 K to 300 K, with AlGaAs/GaAs multiple QWR structures grown by flow rate modulation epitaxy (FME). One of the lasers with cavity length of 350 μm showed fundamental transverse mode, a typical threshold current of 5 mA, ultrahigh characteristic temperature T0 ∼ 322 K above room temperature, and strikingly little wavelength shift (<0.2 nm/K) in emission spectra.

AB - Lasing from the ground state electron and heavy-hole (1e-1hh) transition of the semiconductor quantum wire (QWR) was achieved in the temperature range of 4.5 K to 300 K, with AlGaAs/GaAs multiple QWR structures grown by flow rate modulation epitaxy (FME). One of the lasers with cavity length of 350 μm showed fundamental transverse mode, a typical threshold current of 5 mA, ultrahigh characteristic temperature T0 ∼ 322 K above room temperature, and strikingly little wavelength shift (<0.2 nm/K) in emission spectra.

KW - Lasers

KW - Semiconductor quantum wires

UR - http://www.scopus.com/inward/record.url?scp=0037305454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037305454&partnerID=8YFLogxK

M3 - Article

VL - 42

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SPEC.

ER -