Performance improvements of quantum-wire lasers through the ground state operation

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Lasing from the ground state electron and heavy-hole (1e-1hh) transition of the semiconductor quantum wire (QWR) was achieved in the temperature range of 4.5 K to 300 K, with AlGaAs/GaAs multiple QWR structures grown by flow rate modulation epitaxy (FME). One of the lasers with cavity length of 350 μm showed fundamental transverse mode, a typical threshold current of 5 mA, ultrahigh characteristic temperature T0 ∼ 322 K above room temperature, and strikingly little wavelength shift (<0.2 nm/K) in emission spectra.

Original languageEnglish
Pages (from-to)S379-S382
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
Publication statusPublished - 2003 Feb
Externally publishedYes
EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
Duration: 2002 Aug 202002 Aug 23

Keywords

  • Lasers
  • Semiconductor quantum wires

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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