Lasing from the ground state electron and heavy-hole (1e-1hh) transition of the semiconductor quantum wire (QWR) was achieved in the temperature range of 4.5 K to 300 K, with AlGaAs/GaAs multiple QWR structures grown by flow rate modulation epitaxy (FME). One of the lasers with cavity length of 350 μm showed fundamental transverse mode, a typical threshold current of 5 mA, ultrahigh characteristic temperature T0 ∼ 322 K above room temperature, and strikingly little wavelength shift (<0.2 nm/K) in emission spectra.
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2003 Feb|
|Event||Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of|
Duration: 2002 Aug 20 → 2002 Aug 23
- Semiconductor quantum wires
ASJC Scopus subject areas
- Physics and Astronomy(all)