Performance improvements of ZnO thin film transistors with reduced graphene oxide-embedded channel layers

Sungmin Oh, Tae Ho Lee, Myung Sic Chae, Ju Hyun Park, Tae Geun Kim

Research output: Contribution to journalArticle

Abstract

ZnO thin film transistors (TFTs) with reduced graphene oxide (RGO)-embedded channel layers were fabricated and their electrical properties were compared with those of ZnO TFTs with no embedded layer (bare ZnO TFT), with Cr-embedded channel layers, and with a RGO/ZnO bilayer channel. Compared to the reference samples, the proposed ZnO TFTs with RGO-embedded layers exhibited very stable unipolar transfer characteristics with enhanced carrier mobility of 1.13 cm2 V−1 s−1, subthreshold swing of 0.53 V decade−1, and on/off ratio of 2.31 × 107, unlike most previous reports of graphene-embedded ZnO TFTs which exhibited undesirable ambipolar behavior. These improvements are attributed to the high carrier mobility of the RGO layer and the formation of the ZnO-RGO-ZnO area as a leakage prevention barrier in the negative bias region. In addition, through X-ray photoelectron spectroscopy analysis, it was found that the formation of Zn–C bonds allows for the stable operation of the proposed RGO-embedded ZnO TFT. These results will provide important information for the design of high-mobility TFT architectures for various applications.

Original languageEnglish
Pages (from-to)1367-1374
Number of pages8
JournalJournal of Alloys and Compounds
Volume777
DOIs
Publication statusPublished - 2019 Mar 10

Keywords

  • Indium-free
  • Reduced graphene oxide
  • Saturation mobility
  • Thin film transistor
  • Zinc oxide

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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