Performance of atomic-layer-deposited Yttria-stabilized zirconia near room temperature

D. Y. Jang, H. Kim, K. Bae, M. V F Schlupp, M. Prestat, Joon Hyung Shim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ionic impedance of atomic-layer-deposited yttria-stabilized zirconia thin films was measured in the cross-plane direction in the range 80-300°C. The microstructure of the films was also analyzed using transmission electron microscopy in the highresolution and scanning modes, and the electrical performance of the films was found to be related to their structural characteristics. We found that the ionic impedance of the films near room temperature was lower than that measured at elevated temperatures, presumably because of proton conduction along the surface of the nanopores in the films.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages1103-1106
Number of pages4
Volume57
Edition1
DOIs
Publication statusPublished - 2013

ASJC Scopus subject areas

  • Engineering(all)

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    Jang, D. Y., Kim, H., Bae, K., Schlupp, M. V. F., Prestat, M., & Shim, J. H. (2013). Performance of atomic-layer-deposited Yttria-stabilized zirconia near room temperature. In ECS Transactions (1 ed., Vol. 57, pp. 1103-1106). Electrochemical Society Inc.. https://doi.org/10.1149/05701.1103ecst