Abstract
GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations. n-blocking on p-substrate (VIPS). p-n-p-n blocking on n-substrate (VI(PN) nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 nm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here.
Original language | English |
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Pages (from-to) | 1461-1467 |
Number of pages | 7 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 34 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1998 Aug |
Keywords
- Epitaxial growth
- Lasers
- Quantum-well wire laser
- Stimulated emission
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering