Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations

Tae Geun Kim, Kyung Hyun Park, Sung Min Hwang, Yong Kim, Eun Kyu Kim, Suk Ki Min, Si Jeong Leem, Jong Il Jeon, Jung Ho Park, William S.C. Chang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations. n-blocking on p-substrate (VIPS). p-n-p-n blocking on n-substrate (VI(PN) nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 nm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here.

Original languageEnglish
Pages (from-to)1461-1467
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume34
Issue number8
DOIs
Publication statusPublished - 1998 Aug

Keywords

  • Epitaxial growth
  • Lasers
  • Quantum-well wire laser
  • Stimulated emission

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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