Performance of InGaN/AlGaInN near-UV LEDs with Ni/Ga2O3/Ag/Ga2O3 electrode

Kie Young Woo; Kyeong Heon Kim; Tae Geun Kim

doi:10.1109/LPT.2015.2480744

Performance of InGaN/AlGaInN near-UV LEDs with Ni/Ga₂O₃/Ag/Ga₂O₃ electrode

Kie Young Woo, Kyeong Heon Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We fabricated Ga₂O₃-based transparent conductive electrodes (TCEs) for use in near-ultraviolet (NUV) lightemitting diodes (LEDs) by embedding metal layers into Ga₂O₃. We employ Ni and Ag layers to improve current injection and spreading properties. Our fabricated Ni/Ga₂O₃/Ag/Ga₂O₃ multilayer (annealed at 600 °C, 1 min) deposited on an NUV LED wafer exhibits 83% transmittance at 385 nm with a specific contact resistance of 8 × 10^-3 Ω • cm². An NUV LED fabricated with a Ni/Ga₂O₃/Ag/Ga₂O₃ TCE exhibits a 17% increase in light output power at 150 mA and a 3.2% decrease in forward voltage at 20 mA over those of an indium tin oxide NUV LED.

Original language	English
Pages (from-to)	67-70
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	28
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2015.2480744
Publication status	Published - 2015 Sept 22

Keywords

Gallium nitride
Transparent conductive electrode
Ultraviolet light-emitting diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2015.2480744

Cite this

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title = "Performance of InGaN/AlGaInN near-UV LEDs with Ni/Ga2O3/Ag/Ga2O3 electrode",

abstract = "We fabricated Ga2O3-based transparent conductive electrodes (TCEs) for use in near-ultraviolet (NUV) lightemitting diodes (LEDs) by embedding metal layers into Ga2O3. We employ Ni and Ag layers to improve current injection and spreading properties. Our fabricated Ni/Ga2O3/Ag/Ga2O3 multilayer (annealed at 600 °C, 1 min) deposited on an NUV LED wafer exhibits 83% transmittance at 385 nm with a specific contact resistance of 8 × 10-3 Ω • cm2. An NUV LED fabricated with a Ni/Ga2O3/Ag/Ga2O3 TCE exhibits a 17% increase in light output power at 150 mA and a 3.2% decrease in forward voltage at 20 mA over those of an indium tin oxide NUV LED.",

keywords = "Gallium nitride, Transparent conductive electrode, Ultraviolet light-emitting diode",

author = "Woo, {Kie Young} and Kim, {Kyeong Heon} and Kim, {Tae Geun}",

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AU - Kim, Tae Geun

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AB - We fabricated Ga2O3-based transparent conductive electrodes (TCEs) for use in near-ultraviolet (NUV) lightemitting diodes (LEDs) by embedding metal layers into Ga2O3. We employ Ni and Ag layers to improve current injection and spreading properties. Our fabricated Ni/Ga2O3/Ag/Ga2O3 multilayer (annealed at 600 °C, 1 min) deposited on an NUV LED wafer exhibits 83% transmittance at 385 nm with a specific contact resistance of 8 × 10-3 Ω • cm2. An NUV LED fabricated with a Ni/Ga2O3/Ag/Ga2O3 TCE exhibits a 17% increase in light output power at 150 mA and a 3.2% decrease in forward voltage at 20 mA over those of an indium tin oxide NUV LED.

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