Performance of InGaN/GaN-based light emitting diodes fabricated with zno nanorods

Ki Seok Kim, Sungjoo Song, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZnO nanorod arrays grown by a simple non-catalytic polymer-template wet-chemical growth method were incorporated into blue InGaN-based LEDs to enhance the light extraction efficiency (LEE). Two types of ZnO nanorods, such as well-aligned ZnO nanorods (WAZNR) and not-well-aligned ZnO nanorods (NAZNR) were employed and compared with ITO-only electrodes. LEDs fabricated with WAZNR showed higher electroluminescence intensity and light output power than those with bare-ITO and NAZNR. The LED with WAZNR exhibited much higher EQE than those of the LEDs with bare-ITO and NAZNR. This result implies that the use of WAZNR can be an efficient processing tool for fabrication high performance GaN-based LEDs.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJ. Hite, V. Chakrapani, J. Zavada, T. J. Anderson, S. Kilgore
PublisherElectrochemical Society Inc.
Pages3-10
Number of pages8
Edition7
ISBN (Electronic)9781510866171, 9781510866171, 9781510866171, 9781607688280, 9781607688303, 9781607688310, 9781607688327, 9781607688334, 9781607688341, 9781607688358, 9781607688365, 9781607688372, 9781607688389, 9781607688396, 9781607688402
DOIs
Publication statusPublished - 2018
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting - Seattle, United States
Duration: 2018 May 132018 May 17

Publication series

NameECS Transactions
Number7
Volume85
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting
CountryUnited States
CitySeattle
Period18/5/1318/5/17

ASJC Scopus subject areas

  • Engineering(all)

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