Performance of InGaN/GaN-based light emitting diodes fabricated with zno nanorods

Ki Seok Kim, Sungjoo Song, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZnO nanorod arrays grown by a simple non-catalytic polymer-template wet-chemical growth method were incorporated into blue InGaN-based LEDs to enhance the light extraction efficiency (LEE). Two types of ZnO nanorods, such as well-aligned ZnO nanorods (WAZNR) and not-well-aligned ZnO nanorods (NAZNR) were employed and compared with ITO-only electrodes. LEDs fabricated with WAZNR showed higher electroluminescence intensity and light output power than those with bare-ITO and NAZNR. The LED with WAZNR exhibited much higher EQE than those of the LEDs with bare-ITO and NAZNR. This result implies that the use of WAZNR can be an efficient processing tool for fabrication high performance GaN-based LEDs.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages3-10
Number of pages8
Volume85
Edition7
ISBN (Electronic)9781607685395
Publication statusPublished - 2018 Jan 1
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting - Seattle, United States
Duration: 2018 May 132018 May 17

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting
CountryUnited States
CitySeattle
Period18/5/1318/5/17

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kim, K. S., Song, S., & Seong, T. Y. (2018). Performance of InGaN/GaN-based light emitting diodes fabricated with zno nanorods. In ECS Transactions (7 ed., Vol. 85, pp. 3-10). Electrochemical Society Inc..