Performance of InGaN/GaN light emitting diodes with n-GaN layer embedded with SiO 2 nano-particles

Hong Seo Yom, Jin Kyu Yang, Alexander Y. Polyakov, In-Hwan Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO 2 nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO 2 NPs and preferential light via front surface.

Original languageEnglish
Article number1574
JournalApplied Sciences (Switzerland)
Volume8
Issue number9
DOIs
Publication statusPublished - 2018 Sep 6

Fingerprint

Light emitting diodes
light emitting diodes
voids
Quantum efficiency
quantum efficiency
air
Air
Aluminum Oxide
output
Sapphire
Light scattering
sapphire
light scattering
Substrates
simulation

Keywords

  • Finite-difference time-domain method
  • Internal quantum efficiency
  • Light extraction efficiency
  • Nano-particles
  • Nano-pillars

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation
  • Engineering(all)
  • Process Chemistry and Technology
  • Computer Science Applications
  • Fluid Flow and Transfer Processes

Cite this

Performance of InGaN/GaN light emitting diodes with n-GaN layer embedded with SiO 2 nano-particles . / Yom, Hong Seo; Yang, Jin Kyu; Polyakov, Alexander Y.; Lee, In-Hwan.

In: Applied Sciences (Switzerland), Vol. 8, No. 9, 1574, 06.09.2018.

Research output: Contribution to journalArticle

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AU - Polyakov, Alexander Y.

AU - Lee, In-Hwan

PY - 2018/9/6

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N2 - We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO 2 nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO 2 NPs and preferential light via front surface.

AB - We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO 2 nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO 2 NPs and preferential light via front surface.

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