Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation

Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this paper, we investigate the performance of ring oscillators composed of gate-all-around (GAA) silicon nanowire (NW) field-effect transistors (FETs) with four different numbers of NW channels, for sub-10-nm logic applications. Our simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50%, 85%, and 97%, respectively, in the oscillation frequencies (f osc ), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, our work shows that the f osc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (~0.1 fF). Thus, our study provides an insight for determining the capacitive load and optimal number of NW channels, for device development and circuit design of GAA NW FETs.

Original languageEnglish
JournalCurrent Applied Physics
DOIs
Publication statusAccepted/In press - 2018 Jan 1

Fingerprint

Field effect transistors
Nanowires
nanowires
field effect transistors
oscillators
rings
simulation
Capacitance
capacitance
Silicon
thiazole-4-carboxamide adenine dinucleotide
logic
oscillations
Networks (circuits)
silicon

Keywords

  • Field-effect-transistor
  • Gate-all-around
  • Nanowire
  • Ring oscillator
  • Transient simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation. / Kim, Sutae; Kim, Minsuk; Woo, Sola; Kang, Hyungu; Kim, Sangsig.

In: Current Applied Physics, 01.01.2018.

Research output: Contribution to journalArticle

@article{0f5af01e7a144c6dbde305f0653cbe66,
title = "Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation",
abstract = "In this paper, we investigate the performance of ring oscillators composed of gate-all-around (GAA) silicon nanowire (NW) field-effect transistors (FETs) with four different numbers of NW channels, for sub-10-nm logic applications. Our simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50{\%}, 85{\%}, and 97{\%}, respectively, in the oscillation frequencies (f osc ), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, our work shows that the f osc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (~0.1 fF). Thus, our study provides an insight for determining the capacitive load and optimal number of NW channels, for device development and circuit design of GAA NW FETs.",
keywords = "Field-effect-transistor, Gate-all-around, Nanowire, Ring oscillator, Transient simulation",
author = "Sutae Kim and Minsuk Kim and Sola Woo and Hyungu Kang and Sangsig Kim",
year = "2018",
month = "1",
day = "1",
doi = "10.1016/j.cap.2017.12.012",
language = "English",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",

}

TY - JOUR

T1 - Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation

AU - Kim, Sutae

AU - Kim, Minsuk

AU - Woo, Sola

AU - Kang, Hyungu

AU - Kim, Sangsig

PY - 2018/1/1

Y1 - 2018/1/1

N2 - In this paper, we investigate the performance of ring oscillators composed of gate-all-around (GAA) silicon nanowire (NW) field-effect transistors (FETs) with four different numbers of NW channels, for sub-10-nm logic applications. Our simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50%, 85%, and 97%, respectively, in the oscillation frequencies (f osc ), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, our work shows that the f osc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (~0.1 fF). Thus, our study provides an insight for determining the capacitive load and optimal number of NW channels, for device development and circuit design of GAA NW FETs.

AB - In this paper, we investigate the performance of ring oscillators composed of gate-all-around (GAA) silicon nanowire (NW) field-effect transistors (FETs) with four different numbers of NW channels, for sub-10-nm logic applications. Our simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50%, 85%, and 97%, respectively, in the oscillation frequencies (f osc ), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, our work shows that the f osc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (~0.1 fF). Thus, our study provides an insight for determining the capacitive load and optimal number of NW channels, for device development and circuit design of GAA NW FETs.

KW - Field-effect-transistor

KW - Gate-all-around

KW - Nanowire

KW - Ring oscillator

KW - Transient simulation

UR - http://www.scopus.com/inward/record.url?scp=85042267028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042267028&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2017.12.012

DO - 10.1016/j.cap.2017.12.012

M3 - Article

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

ER -