Performance of WCN diffusion barrier for Cu multilevel interconnects

Seung Yeon Lee, Byeong Kwon Ju, Yong Tae Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100μΩcm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.

Original languageEnglish
Article number04FC01
JournalJapanese Journal of Applied Physics
Volume57
Issue number4
DOIs
Publication statusPublished - 2018 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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