Performance of WCN diffusion barrier for Cu multilevel interconnects

Seung Yeon Lee, Byeong Kwon Ju, Yong Tae Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100μΩcm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.

Original languageEnglish
Article number04FC01
JournalJapanese Journal of Applied Physics
Volume57
Issue number4
DOIs
Publication statusPublished - 2018 Apr 1

Fingerprint

Diffusion barriers
Atomic layer deposition
Contact resistance
atomic layer epitaxy
high aspect ratio
contact resistance
Aspect ratio
Electric properties
Thermodynamic properties
thermodynamic properties
electrical properties
deviation
life (durability)
electrical resistivity
Gases
gases

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Performance of WCN diffusion barrier for Cu multilevel interconnects. / Lee, Seung Yeon; Ju, Byeong Kwon; Kim, Yong Tae.

In: Japanese Journal of Applied Physics, Vol. 57, No. 4, 04FC01, 01.04.2018.

Research output: Contribution to journalArticle

@article{74031df6c1654af5b51f3336f9fb80f0,
title = "Performance of WCN diffusion barrier for Cu multilevel interconnects",
abstract = "The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100μΩcm and 96.9{\%} step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10{\%} deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.",
author = "Lee, {Seung Yeon} and Ju, {Byeong Kwon} and Kim, {Yong Tae}",
year = "2018",
month = "4",
day = "1",
doi = "10.7567/JJAP.57.04FC01",
language = "English",
volume = "57",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4",

}

TY - JOUR

T1 - Performance of WCN diffusion barrier for Cu multilevel interconnects

AU - Lee, Seung Yeon

AU - Ju, Byeong Kwon

AU - Kim, Yong Tae

PY - 2018/4/1

Y1 - 2018/4/1

N2 - The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100μΩcm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.

AB - The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100μΩcm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.

UR - http://www.scopus.com/inward/record.url?scp=85044453830&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85044453830&partnerID=8YFLogxK

U2 - 10.7567/JJAP.57.04FC01

DO - 10.7567/JJAP.57.04FC01

M3 - Article

AN - SCOPUS:85044453830

VL - 57

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4

M1 - 04FC01

ER -