Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method

Ying Zhang, Hoon Seok Seo, Min Jun An, Jong-Ho Choi

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We present the first application of the neutral cluster beam deposition (NCBD) method to prepare n-type organic thin-film transistors with a top-contact structure based on N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13). Systematic analysis was carried out to examine the effects of surface passivation and thermal post-treatment on the morphology and crystallinity of P13 active layers and device performance, together with operational stability as a function of time. The high room-temperature field-effect mobility of 0.58 cm2/Vs for the thermally post-treated devices was obtained under ambient conditions. The comparative study of the transport mechanisms responsible for conduction of the electron carriers over a temperature range of 10-300 K indicated that surface modification and thermal post-treatment decrease total trap density and activation energy for carrier transport by reducing structural disorder.

Original languageEnglish
Pages (from-to)895-900
Number of pages6
JournalOrganic Electronics: physics, materials, applications
Volume10
Issue number5
DOIs
Publication statusPublished - 2009 Aug 1

Fingerprint

Field effect transistors
field effect transistors
Carrier transport
Thin film transistors
Passivation
passivity
Surface treatment
electric contacts
crystallinity
Temperature distribution
temperature distribution
transistors
flux density
Activation energy
traps
disorders
activation energy
conduction
Electrons
room temperature

Keywords

  • Hexamethyldisilazane (HMDS)
  • N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)
  • n-Type field-effect transistors
  • Neutral cluster beam deposition (NCBD)
  • Temperature-dependence of field-effect mobility

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Cite this

Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method. / Zhang, Ying; Seo, Hoon Seok; An, Min Jun; Choi, Jong-Ho.

In: Organic Electronics: physics, materials, applications, Vol. 10, No. 5, 01.08.2009, p. 895-900.

Research output: Contribution to journalArticle

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