Phase change and electrical characteristics of Ge-Se-Te alloys

Eui Bok Lee; Byeong Kwon Ju; Yong Tae Kim

doi:10.1016/j.mee.2009.03.089

Phase change and electrical characteristics of Ge-Se-Te alloys

Eui Bok Lee, Byeong Kwon Ju, Yong Tae Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

Original language	English
Pages (from-to)	1950-1953
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.089
Publication status	Published - 2009 Jul

Keywords

Chalcogenide
Ge-Se-Te alloys
Phase change materials

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2009.03.089

Cite this

@article{22988033dfe64d798a7323bdb1a41029,

title = "Phase change and electrical characteristics of Ge-Se-Te alloys",

abstract = "Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.",

keywords = "Chalcogenide, Ge-Se-Te alloys, Phase change materials",

author = "Lee, {Eui Bok} and Ju, {Byeong Kwon} and Kim, {Yong Tae}",

note = "Funding Information: This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Knowledge Economy and Samsung Electronics and supported by the National Research Laboratory (NRL, R0A-2007-000-20111-0) Program of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation, KOSEF).",

year = "2009",

month = jul,

doi = "10.1016/j.mee.2009.03.089",

language = "English",

volume = "86",

pages = "1950--1953",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "7-9",

}

TY - JOUR

T1 - Phase change and electrical characteristics of Ge-Se-Te alloys

AU - Lee, Eui Bok

AU - Ju, Byeong Kwon

AU - Kim, Yong Tae

N1 - Funding Information: This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Knowledge Economy and Samsung Electronics and supported by the National Research Laboratory (NRL, R0A-2007-000-20111-0) Program of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation, KOSEF).

PY - 2009/7

Y1 - 2009/7

N2 - Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

AB - Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

KW - Chalcogenide

KW - Ge-Se-Te alloys

KW - Phase change materials

UR - http://www.scopus.com/inward/record.url?scp=67349118350&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2009.03.089

DO - 10.1016/j.mee.2009.03.089

M3 - Article

AN - SCOPUS:67349118350

VL - 86

SP - 1950

EP - 1953

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 7-9

ER -

Phase change and electrical characteristics of Ge-Se-Te alloys

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this