Abstract
Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.
| Original language | English |
|---|---|
| Pages (from-to) | 1950-1953 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 86 |
| Issue number | 7-9 |
| DOIs | |
| Publication status | Published - 2009 Jul |
Keywords
- Chalcogenide
- Ge-Se-Te alloys
- Phase change materials
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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Lee, E. B., Ju, B. K., & Kim, Y. T. (2009). Phase change and electrical characteristics of Ge-Se-Te alloys. Microelectronic Engineering, 86(7-9), 1950-1953. https://doi.org/10.1016/j.mee.2009.03.089