Phase change and electrical characteristics of Ge-Se-Te alloys

Eui B. Lee, Byeong Kwon Ju, Yong T. Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

Original languageEnglish
Pages (from-to)1950-1953
Number of pages4
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
Publication statusPublished - 2009 Jul 1

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Keywords

  • Chalcogenide
  • Ge-Se-Te alloys
  • Phase change materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

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