Phase change and electrical characteristics of Ge-Se-Te alloys

Eui B. Lee, Byeong Kwon Ju, Yong T. Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

Original languageEnglish
Pages (from-to)1950-1953
Number of pages4
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
Publication statusPublished - 2009 Jul 1

Fingerprint

Ternary systems
Crystallization
Grain growth
Threshold voltage
Data storage equipment
Microstructure
random access memory
ternary systems
threshold voltage
crystallization
Temperature
microstructure
cells
temperature

Keywords

  • Chalcogenide
  • Ge-Se-Te alloys
  • Phase change materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Phase change and electrical characteristics of Ge-Se-Te alloys. / Lee, Eui B.; Ju, Byeong Kwon; Kim, Yong T.

In: Microelectronic Engineering, Vol. 86, No. 7-9, 01.07.2009, p. 1950-1953.

Research output: Contribution to journalArticle

Lee, Eui B. ; Ju, Byeong Kwon ; Kim, Yong T. / Phase change and electrical characteristics of Ge-Se-Te alloys. In: Microelectronic Engineering. 2009 ; Vol. 86, No. 7-9. pp. 1950-1953.
@article{22988033dfe64d798a7323bdb1a41029,
title = "Phase change and electrical characteristics of Ge-Se-Te alloys",
abstract = "Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at{\%} crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.",
keywords = "Chalcogenide, Ge-Se-Te alloys, Phase change materials",
author = "Lee, {Eui B.} and Ju, {Byeong Kwon} and Kim, {Yong T.}",
year = "2009",
month = "7",
day = "1",
doi = "10.1016/j.mee.2009.03.089",
language = "English",
volume = "86",
pages = "1950--1953",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "7-9",

}

TY - JOUR

T1 - Phase change and electrical characteristics of Ge-Se-Te alloys

AU - Lee, Eui B.

AU - Ju, Byeong Kwon

AU - Kim, Yong T.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

AB - Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

KW - Chalcogenide

KW - Ge-Se-Te alloys

KW - Phase change materials

UR - http://www.scopus.com/inward/record.url?scp=67349118350&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349118350&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2009.03.089

DO - 10.1016/j.mee.2009.03.089

M3 - Article

VL - 86

SP - 1950

EP - 1953

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 7-9

ER -