Abstract
Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.
| Original language | English |
|---|---|
| Pages (from-to) | 1950-1953 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 86 |
| Issue number | 7-9 |
| DOIs | |
| Publication status | Published - 2009 Jul 1 |
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Keywords
- Chalcogenide
- Ge-Se-Te alloys
- Phase change materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
Cite this
Phase change and electrical characteristics of Ge-Se-Te alloys. / Lee, Eui B.; Ju, Byeong Kwon; Kim, Yong T.
In: Microelectronic Engineering, Vol. 86, No. 7-9, 01.07.2009, p. 1950-1953.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Phase change and electrical characteristics of Ge-Se-Te alloys
AU - Lee, Eui B.
AU - Ju, Byeong Kwon
AU - Kim, Yong T.
PY - 2009/7/1
Y1 - 2009/7/1
N2 - Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.
AB - Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.
KW - Chalcogenide
KW - Ge-Se-Te alloys
KW - Phase change materials
UR - http://www.scopus.com/inward/record.url?scp=67349118350&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67349118350&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2009.03.089
DO - 10.1016/j.mee.2009.03.089
M3 - Article
AN - SCOPUS:67349118350
VL - 86
SP - 1950
EP - 1953
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 7-9
ER -