Phase change and electrical characteristics of Ge-Se-Te alloys

Eui B. Lee; Byeong Kwon Ju; Yong T. Kim

doi:10.1016/j.mee.2009.03.089

Phase change and electrical characteristics of Ge-Se-Te alloys

Eui B. Lee, Byeong Kwon Ju, Yong T. Kim

School of Electrical Engineering

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

Original language	English
Pages (from-to)	1950-1953
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.089
Publication status	Published - 2009 Jul 1

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Keywords

Chalcogenide
Ge-Se-Te alloys
Phase change materials

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Condensed Matter Physics
Atomic and Molecular Physics, and Optics

Cite this

Lee, E. B., Ju, B. K., & Kim, Y. T. (2009). Phase change and electrical characteristics of Ge-Se-Te alloys. Microelectronic Engineering, 86(7-9), 1950-1953. https://doi.org/10.1016/j.mee.2009.03.089

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Access to Document

10.1016/j.mee.2009.03.089