Phase separation and associated defects in MBE InAsySb1-y epitaxial layers

T. Y. Seong, A. G. Norman, J. L. Hutchison, I. T. Ferguson, G. R. Booker, R. A. Stradling, B. A. Joyce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)


TEM, TED and HREM examinations have been performed on (001) MBE layers of nominal composition InAs0.5SB0.5 grown using constant ratios of group V fluxes. For growth at 430°C, single composition material occurred. For growth at ≤400°C, alternating, tetragonally distorted, elongated platelets of two cubic phase of compositions approximately InAs0.40Sb0.60 and approximately InAs0.78Sb0.22 occurred, corresponding to a strained layer superlattice structure. These two-phase structures formed spontaneously at the growing layer surface and were stable during subsequent annealing at 370°C. It is suggested that they arise due to the presence of a miscibility gap at these low temperatures.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Number of pages6
ISBN (Print)0854984062
Publication statusPublished - 1991
Externally publishedYes
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: 1991 Mar 251991 Mar 28

Publication series

NameInstitute of Physics Conference Series
ISSN (Print)0373-0751


OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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