Phase separation and associated defects in MBE InAsySb1-y epitaxial layers

Tae Yeon Seong, A. G. Norman, J. L. Hutchison, I. T. Ferguson, G. R. Booker, R. A. Stradling, B. A. Joyce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

TEM, TED and HREM examinations have been performed on (001) MBE layers of nominal composition InAs0.5SB0.5 grown using constant ratios of group V fluxes. For growth at 430°C, single composition material occurred. For growth at ≤400°C, alternating, tetragonally distorted, elongated platelets of two cubic phase of compositions approximately InAs0.40Sb0.60 and approximately InAs0.78Sb0.22 occurred, corresponding to a strained layer superlattice structure. These two-phase structures formed spontaneously at the growing layer surface and were stable during subsequent annealing at 370°C. It is suggested that they arise due to the presence of a miscibility gap at these low temperatures.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
Place of PublicationBristol, United Kingdom
PublisherPubl by Inst of Physics Publ Ltd
Pages485-490
Number of pages6
Edition117
ISBN (Print)0854984062
Publication statusPublished - 1991 Dec 1
Externally publishedYes
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: 1991 Mar 251991 Mar 28

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period91/3/2591/3/28

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Seong, T. Y., Norman, A. G., Hutchison, J. L., Ferguson, I. T., Booker, G. R., Stradling, R. A., & Joyce, B. A. (1991). Phase separation and associated defects in MBE InAsySb1-y epitaxial layers. In Institute of Physics Conference Series (117 ed., pp. 485-490). Publ by Inst of Physics Publ Ltd.