Phase separation and associated defects in MBE InAsySb1-y epitaxial layers

Tae Yeon Seong, A. G. Norman, J. L. Hutchison, I. T. Ferguson, G. R. Booker, R. A. Stradling, B. A. Joyce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

TEM, TED and HREM examinations have been performed on (001) MBE layers of nominal composition InAs0.5SB0.5 grown using constant ratios of group V fluxes. For growth at 430°C, single composition material occurred. For growth at ≤400°C, alternating, tetragonally distorted, elongated platelets of two cubic phase of compositions approximately InAs0.40Sb0.60 and approximately InAs0.78Sb0.22 occurred, corresponding to a strained layer superlattice structure. These two-phase structures formed spontaneously at the growing layer surface and were stable during subsequent annealing at 370°C. It is suggested that they arise due to the presence of a miscibility gap at these low temperatures.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
Place of PublicationBristol, United Kingdom
PublisherPubl by Inst of Physics Publ Ltd
Pages485-490
Number of pages6
Edition117
ISBN (Print)0854984062
Publication statusPublished - 1991 Dec 1
Externally publishedYes
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: 1991 Mar 251991 Mar 28

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period91/3/2591/3/28

Fingerprint

Epitaxial layers
Molecular beam epitaxy
Phase separation
Defects
defects
Chemical analysis
transferred electron devices
miscibility gap
High resolution electron microscopy
Phase structure
Platelets
platelets
surface layers
Solubility
examination
Annealing
Fluxes
Transmission electron microscopy
transmission electron microscopy
annealing

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Seong, T. Y., Norman, A. G., Hutchison, J. L., Ferguson, I. T., Booker, G. R., Stradling, R. A., & Joyce, B. A. (1991). Phase separation and associated defects in MBE InAsySb1-y epitaxial layers. In Institute of Physics Conference Series (117 ed., pp. 485-490). Bristol, United Kingdom: Publ by Inst of Physics Publ Ltd.

Phase separation and associated defects in MBE InAsySb1-y epitaxial layers. / Seong, Tae Yeon; Norman, A. G.; Hutchison, J. L.; Ferguson, I. T.; Booker, G. R.; Stradling, R. A.; Joyce, B. A.

Institute of Physics Conference Series. 117. ed. Bristol, United Kingdom : Publ by Inst of Physics Publ Ltd, 1991. p. 485-490.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Seong, TY, Norman, AG, Hutchison, JL, Ferguson, IT, Booker, GR, Stradling, RA & Joyce, BA 1991, Phase separation and associated defects in MBE InAsySb1-y epitaxial layers. in Institute of Physics Conference Series. 117 edn, Publ by Inst of Physics Publ Ltd, Bristol, United Kingdom, pp. 485-490, Proceedings of the Conference on Microscopy of Semiconducting Materials 1991, Oxford, Engl, 91/3/25.
Seong TY, Norman AG, Hutchison JL, Ferguson IT, Booker GR, Stradling RA et al. Phase separation and associated defects in MBE InAsySb1-y epitaxial layers. In Institute of Physics Conference Series. 117 ed. Bristol, United Kingdom: Publ by Inst of Physics Publ Ltd. 1991. p. 485-490
Seong, Tae Yeon ; Norman, A. G. ; Hutchison, J. L. ; Ferguson, I. T. ; Booker, G. R. ; Stradling, R. A. ; Joyce, B. A. / Phase separation and associated defects in MBE InAsySb1-y epitaxial layers. Institute of Physics Conference Series. 117. ed. Bristol, United Kingdom : Publ by Inst of Physics Publ Ltd, 1991. pp. 485-490
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