Phase separation and atomic ordering in InAsSb epitaxial layers grown by molecular beam epitaxy

Joon Hyung Kim, Tae Yeon Seong, G. R. Booker

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Abstract

InAs 0.5Sb 0.5 epitaxial layers were grown by molecular beam epitaxy at 370° C on the three types of GaAs substrates with different misorientations: exact (001), 3° off toward [110] and 3° off toward [11̄0]. Transmission electron microscope and transmission electron diffraction studies showed that phase separation occurred resulting in plates lying approximately parallel to the layer surface and that CuPt-type atomic ordering also occurred during growth. The morphology of the phase separated plates was found to depend on different substrate misorientations. TED results showed that CuPt type atomic ordering was also affected by the steps associated with misorientations.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume30
Issue numberSUPPL. PART 1
Publication statusPublished - 1997 Dec 1
Externally publishedYes

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misalignment
molecular beam epitaxy
transferred electron devices
surface layers
electron diffraction
electron microscopes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Phase separation and atomic ordering in InAsSb epitaxial layers grown by molecular beam epitaxy. / Kim, Joon Hyung; Seong, Tae Yeon; Booker, G. R.

In: Journal of the Korean Physical Society, Vol. 30, No. SUPPL. PART 1, 01.12.1997.

Research output: Contribution to journalArticle

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