Phase separation suppression in InxGa1-xN on a Si substrate using an indium modulation technique

Hyeonseok Woo, Hansol Jo, Jongmin Kim, Sangeun Cho, Yongcheol Jo, Cheong Hyun Roh, Jun Ho Lee, Yonggon Seo, Jung ho Park, Hyungsang Kim, Cheol Koo Hahn, Hyunsik Im

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence measurements. We propose a growth mechanism for single phase InGaN in terms of optimal incorporation and surface migration of In atoms.

Original languageEnglish
JournalCurrent Applied Physics
DOIs
Publication statusAccepted/In press - 2017 Jan 25

Fingerprint

Indium
Epitaxial films
Molecular beam epitaxy
Phase separation
indium
Structural properties
Atomic force microscopy
Photoluminescence
Optical properties
Modulation
retarding
Plasmas
modulation
X ray diffraction
Atoms
Substrates
atomic force microscopy
photoluminescence
optical properties
pulses

Keywords

  • InGaN
  • MBE
  • Metal modulation epitaxy
  • Phase separation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Phase separation suppression in InxGa1-xN on a Si substrate using an indium modulation technique. / Woo, Hyeonseok; Jo, Hansol; Kim, Jongmin; Cho, Sangeun; Jo, Yongcheol; Roh, Cheong Hyun; Lee, Jun Ho; Seo, Yonggon; Park, Jung ho; Kim, Hyungsang; Hahn, Cheol Koo; Im, Hyunsik.

In: Current Applied Physics, 25.01.2017.

Research output: Contribution to journalArticle

Woo, Hyeonseok ; Jo, Hansol ; Kim, Jongmin ; Cho, Sangeun ; Jo, Yongcheol ; Roh, Cheong Hyun ; Lee, Jun Ho ; Seo, Yonggon ; Park, Jung ho ; Kim, Hyungsang ; Hahn, Cheol Koo ; Im, Hyunsik. / Phase separation suppression in InxGa1-xN on a Si substrate using an indium modulation technique. In: Current Applied Physics. 2017.
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AU - Jo, Hansol

AU - Kim, Jongmin

AU - Cho, Sangeun

AU - Jo, Yongcheol

AU - Roh, Cheong Hyun

AU - Lee, Jun Ho

AU - Seo, Yonggon

AU - Park, Jung ho

AU - Kim, Hyungsang

AU - Hahn, Cheol Koo

AU - Im, Hyunsik

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