Phase separation suppression in InxGa1-xN on a Si substrate using an indium modulation technique

Hyeonseok Woo, Hansol Jo, Jongmin Kim, Sangeun Cho, Yongcheol Jo, Cheong Hyun Roh, Jun Ho Lee, Yonggon Seo, Jung ho Park, Hyungsang Kim, Cheol Koo Hahn, Hyunsik Im

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2 Citations (Scopus)

Abstract

A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence measurements. We propose a growth mechanism for single phase InGaN in terms of optimal incorporation and surface migration of In atoms.

Original languageEnglish
JournalCurrent Applied Physics
DOIs
Publication statusAccepted/In press - 2017 Jan 25

Keywords

  • InGaN
  • MBE
  • Metal modulation epitaxy
  • Phase separation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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    Woo, H., Jo, H., Kim, J., Cho, S., Jo, Y., Roh, C. H., Lee, J. H., Seo, Y., Park, J. H., Kim, H., Hahn, C. K., & Im, H. (Accepted/In press). Phase separation suppression in InxGa1-xN on a Si substrate using an indium modulation technique. Current Applied Physics. https://doi.org/10.1016/j.cap.2017.05.003