Abstract
We report the crossover for the microwave dielectric constant of camphor-sulfonic-acid-doped polyaniline prepared in m-cresol from very large room-temperature negative values to large positive ones with decreasing temperature below Ts∼20 K. We attribute this change to the transition from a phonon-controlled metallic state to a nonmetallic state with localized carriers and hopping transport below Ts. Electronically, one-dimensional chains that couple the three-dimensional crystalline regions are likely central for understanding the origin of this transition as weak localization. At T<Ts we also observed an increase in the thermoelectric power and a linear decrease in the reduced activation energy for dc conductivity.
| Original language | English |
|---|---|
| Pages (from-to) | 12226-12229 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 50 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 1994 Dec 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
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Phonon-induced nonmetal-metal transition of a doped polyaniline. / Joo, Jinsoo; Prigodin, V. N.; Min, Y. G.; MacDiarmid, A. G.; Epstein, A. J.
In: Physical Review B, Vol. 50, No. 16, 01.12.1994, p. 12226-12229.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Phonon-induced nonmetal-metal transition of a doped polyaniline
AU - Joo, Jinsoo
AU - Prigodin, V. N.
AU - Min, Y. G.
AU - MacDiarmid, A. G.
AU - Epstein, A. J.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - We report the crossover for the microwave dielectric constant of camphor-sulfonic-acid-doped polyaniline prepared in m-cresol from very large room-temperature negative values to large positive ones with decreasing temperature below Ts∼20 K. We attribute this change to the transition from a phonon-controlled metallic state to a nonmetallic state with localized carriers and hopping transport below Ts. Electronically, one-dimensional chains that couple the three-dimensional crystalline regions are likely central for understanding the origin of this transition as weak localization. At T<Ts we also observed an increase in the thermoelectric power and a linear decrease in the reduced activation energy for dc conductivity.
AB - We report the crossover for the microwave dielectric constant of camphor-sulfonic-acid-doped polyaniline prepared in m-cresol from very large room-temperature negative values to large positive ones with decreasing temperature below Ts∼20 K. We attribute this change to the transition from a phonon-controlled metallic state to a nonmetallic state with localized carriers and hopping transport below Ts. Electronically, one-dimensional chains that couple the three-dimensional crystalline regions are likely central for understanding the origin of this transition as weak localization. At T<Ts we also observed an increase in the thermoelectric power and a linear decrease in the reduced activation energy for dc conductivity.
UR - http://www.scopus.com/inward/record.url?scp=0001048914&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001048914&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.50.12226
DO - 10.1103/PhysRevB.50.12226
M3 - Article
AN - SCOPUS:0001048914
VL - 50
SP - 12226
EP - 12229
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 16
ER -