Photo-enhanced acid chemical etching of high-quality aluminum nitride grown by metal-organic chemical vapor deposition

Yong ha Choi, Kwang Hyeon Baik, Rakjun Choi, Jeongtak Oh, Ji Hyun Kim

Research output: Contribution to journalArticle

Abstract

Photo-enhanced chemical (PEC) etch of wurtzite aluminum nitride (AlN) was investigated to overcome its low etch rate. Epitaxial AlN grown on Al2O3 substrate by metal-organic chemical vapor deposition method was immersed in phosphoric acid at different temperatures under 185 nm deep-UV excitation. An inverted pyramid structure with {10-1-1} faces initially appeared, after chemical etching, evolving into hexagonal columns with {1-100} m-planes. The PEC etch rate of m-plane AlN was six-fold higher than that of non-PEC one because the reaction was enhanced by the electron-hole pairs photo-generated by 185 nm wavelength. The decrease of the activation energy from 68.5 kJ/mol (non-PEC etch) to 48.1 kJ/mol (PEC etch) was extracted, implying a reaction-limited etching process. The PEC etch mechanism of wurtzite AlN in phosphoric acid was proposed, including the initiation and growth of the etch pit and the agglomeration of the hexagonal columns. Our results propose a facile method to control the surface morphology of AlN-based electronic and optoelectronic devices.

Original languageEnglish
Pages (from-to)N42-N46
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number3
DOIs
Publication statusPublished - 2019 Jan 1

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Organic Chemicals
Aluminum nitride
Organic chemicals
Chemical vapor deposition
Etching
Metals
Acids
Phosphoric acid
aluminum nitride
Optoelectronic devices
Surface morphology
Agglomeration
Activation energy
Wavelength
Electrons
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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Photo-enhanced acid chemical etching of high-quality aluminum nitride grown by metal-organic chemical vapor deposition. / Choi, Yong ha; Baik, Kwang Hyeon; Choi, Rakjun; Oh, Jeongtak; Kim, Ji Hyun.

In: ECS Journal of Solid State Science and Technology, Vol. 8, No. 3, 01.01.2019, p. N42-N46.

Research output: Contribution to journalArticle

@article{cf468782d5144b7db34cf674f60db2df,
title = "Photo-enhanced acid chemical etching of high-quality aluminum nitride grown by metal-organic chemical vapor deposition",
abstract = "Photo-enhanced chemical (PEC) etch of wurtzite aluminum nitride (AlN) was investigated to overcome its low etch rate. Epitaxial AlN grown on Al2O3 substrate by metal-organic chemical vapor deposition method was immersed in phosphoric acid at different temperatures under 185 nm deep-UV excitation. An inverted pyramid structure with {10-1-1} faces initially appeared, after chemical etching, evolving into hexagonal columns with {1-100} m-planes. The PEC etch rate of m-plane AlN was six-fold higher than that of non-PEC one because the reaction was enhanced by the electron-hole pairs photo-generated by 185 nm wavelength. The decrease of the activation energy from 68.5 kJ/mol (non-PEC etch) to 48.1 kJ/mol (PEC etch) was extracted, implying a reaction-limited etching process. The PEC etch mechanism of wurtzite AlN in phosphoric acid was proposed, including the initiation and growth of the etch pit and the agglomeration of the hexagonal columns. Our results propose a facile method to control the surface morphology of AlN-based electronic and optoelectronic devices.",
author = "Choi, {Yong ha} and Baik, {Kwang Hyeon} and Rakjun Choi and Jeongtak Oh and Kim, {Ji Hyun}",
year = "2019",
month = "1",
day = "1",
doi = "10.1149/2.0051903jss",
language = "English",
volume = "8",
pages = "N42--N46",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "3",

}

TY - JOUR

T1 - Photo-enhanced acid chemical etching of high-quality aluminum nitride grown by metal-organic chemical vapor deposition

AU - Choi, Yong ha

AU - Baik, Kwang Hyeon

AU - Choi, Rakjun

AU - Oh, Jeongtak

AU - Kim, Ji Hyun

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Photo-enhanced chemical (PEC) etch of wurtzite aluminum nitride (AlN) was investigated to overcome its low etch rate. Epitaxial AlN grown on Al2O3 substrate by metal-organic chemical vapor deposition method was immersed in phosphoric acid at different temperatures under 185 nm deep-UV excitation. An inverted pyramid structure with {10-1-1} faces initially appeared, after chemical etching, evolving into hexagonal columns with {1-100} m-planes. The PEC etch rate of m-plane AlN was six-fold higher than that of non-PEC one because the reaction was enhanced by the electron-hole pairs photo-generated by 185 nm wavelength. The decrease of the activation energy from 68.5 kJ/mol (non-PEC etch) to 48.1 kJ/mol (PEC etch) was extracted, implying a reaction-limited etching process. The PEC etch mechanism of wurtzite AlN in phosphoric acid was proposed, including the initiation and growth of the etch pit and the agglomeration of the hexagonal columns. Our results propose a facile method to control the surface morphology of AlN-based electronic and optoelectronic devices.

AB - Photo-enhanced chemical (PEC) etch of wurtzite aluminum nitride (AlN) was investigated to overcome its low etch rate. Epitaxial AlN grown on Al2O3 substrate by metal-organic chemical vapor deposition method was immersed in phosphoric acid at different temperatures under 185 nm deep-UV excitation. An inverted pyramid structure with {10-1-1} faces initially appeared, after chemical etching, evolving into hexagonal columns with {1-100} m-planes. The PEC etch rate of m-plane AlN was six-fold higher than that of non-PEC one because the reaction was enhanced by the electron-hole pairs photo-generated by 185 nm wavelength. The decrease of the activation energy from 68.5 kJ/mol (non-PEC etch) to 48.1 kJ/mol (PEC etch) was extracted, implying a reaction-limited etching process. The PEC etch mechanism of wurtzite AlN in phosphoric acid was proposed, including the initiation and growth of the etch pit and the agglomeration of the hexagonal columns. Our results propose a facile method to control the surface morphology of AlN-based electronic and optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85072011136&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072011136&partnerID=8YFLogxK

U2 - 10.1149/2.0051903jss

DO - 10.1149/2.0051903jss

M3 - Article

VL - 8

SP - N42-N46

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 3

ER -