Abstract
The single-layer and multi-layers of MoS2 were grown using the chemical vapor deposition (CVD) method. The structural properties of the MoS2 were investigated through X-ray photoelectron spectroscopy (XPS). The optical characteristics in nanoscale of the MoS2 were determined from the analysis of Raman and photoluminescence (PL) spectra using a high-resolution laser confocal microscope (LCM). Thin-film-transistors (TFTs) using a single-layer MoS2 were fabricated, and the photo-responsive current-voltage (I–V) characteristics of the TFTs were measured with varying intensities of incident light. We observed the increase of both the photo-current and mobility with increasing the intensity of incident light. This is due to the contribution of photo-induced charge carriers from the valance band and trap states. The increasing rate of the photo-current of the TFTs with gate bias (i.e. on state) was considerably higher than that in off state, indicating the gate controlled photo-sensitive transistor.
Original language | English |
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Pages (from-to) | 1320-1325 |
Number of pages | 6 |
Journal | Current Applied Physics |
Volume | 16 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2016 Oct 1 |
Keywords
- MoS
- Mobility
- Nanoscale
- Photo-responsive
- Photoluminescence
- Transistor
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)