Abstract
The single-layer and multi-layers of MoS2 were grown using the chemical vapor deposition (CVD) method. The structural properties of the MoS2 were investigated through X-ray photoelectron spectroscopy (XPS). The optical characteristics in nanoscale of the MoS2 were determined from the analysis of Raman and photoluminescence (PL) spectra using a high-resolution laser confocal microscope (LCM). Thin-film-transistors (TFTs) using a single-layer MoS2 were fabricated, and the photo-responsive current-voltage (I–V) characteristics of the TFTs were measured with varying intensities of incident light. We observed the increase of both the photo-current and mobility with increasing the intensity of incident light. This is due to the contribution of photo-induced charge carriers from the valance band and trap states. The increasing rate of the photo-current of the TFTs with gate bias (i.e. on state) was considerably higher than that in off state, indicating the gate controlled photo-sensitive transistor.
| Original language | English |
|---|---|
| Pages (from-to) | 1320-1325 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 16 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2016 Oct 1 |
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Keywords
- Mobility
- MoS
- Nanoscale
- Photo-responsive
- Photoluminescence
- Transistor
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Photo-responsive transistors of CVD grown single-layer MoS2 and its nanoscale optical characteristics. / Park, Hyeon Jung; Kim, Min Su; Kim, Jeongyong; Joo, Jinsoo.
In: Current Applied Physics, Vol. 16, No. 10, 01.10.2016, p. 1320-1325.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photo-responsive transistors of CVD grown single-layer MoS2 and its nanoscale optical characteristics
AU - Park, Hyeon Jung
AU - Kim, Min Su
AU - Kim, Jeongyong
AU - Joo, Jinsoo
PY - 2016/10/1
Y1 - 2016/10/1
N2 - The single-layer and multi-layers of MoS2 were grown using the chemical vapor deposition (CVD) method. The structural properties of the MoS2 were investigated through X-ray photoelectron spectroscopy (XPS). The optical characteristics in nanoscale of the MoS2 were determined from the analysis of Raman and photoluminescence (PL) spectra using a high-resolution laser confocal microscope (LCM). Thin-film-transistors (TFTs) using a single-layer MoS2 were fabricated, and the photo-responsive current-voltage (I–V) characteristics of the TFTs were measured with varying intensities of incident light. We observed the increase of both the photo-current and mobility with increasing the intensity of incident light. This is due to the contribution of photo-induced charge carriers from the valance band and trap states. The increasing rate of the photo-current of the TFTs with gate bias (i.e. on state) was considerably higher than that in off state, indicating the gate controlled photo-sensitive transistor.
AB - The single-layer and multi-layers of MoS2 were grown using the chemical vapor deposition (CVD) method. The structural properties of the MoS2 were investigated through X-ray photoelectron spectroscopy (XPS). The optical characteristics in nanoscale of the MoS2 were determined from the analysis of Raman and photoluminescence (PL) spectra using a high-resolution laser confocal microscope (LCM). Thin-film-transistors (TFTs) using a single-layer MoS2 were fabricated, and the photo-responsive current-voltage (I–V) characteristics of the TFTs were measured with varying intensities of incident light. We observed the increase of both the photo-current and mobility with increasing the intensity of incident light. This is due to the contribution of photo-induced charge carriers from the valance band and trap states. The increasing rate of the photo-current of the TFTs with gate bias (i.e. on state) was considerably higher than that in off state, indicating the gate controlled photo-sensitive transistor.
KW - Mobility
KW - MoS
KW - Nanoscale
KW - Photo-responsive
KW - Photoluminescence
KW - Transistor
UR - http://www.scopus.com/inward/record.url?scp=84982168590&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84982168590&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2016.07.006
DO - 10.1016/j.cap.2016.07.006
M3 - Article
AN - SCOPUS:84982168590
VL - 16
SP - 1320
EP - 1325
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 10
ER -