Photoconductance of aligned SnO2 nanowire field effect transistors

Daeil Kim, Yong Kwan Kim, Sung Chan Park, Jeong Sook Ha, Junghwan Huh, Junhong Na, Gyu-Tae Kim

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼ 107 at the gate voltage Vg =-40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity.

Original languageEnglish
Article number043107
JournalApplied Physics Letters
Volume95
Issue number4
DOIs
Publication statusPublished - 2009 Aug 11

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nanowires
field effect transistors
photocurrents
photosensitivity
dark current
dynamic response
sliding
vapor deposition
sensitivity
detectors
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoconductance of aligned SnO2 nanowire field effect transistors. / Kim, Daeil; Kim, Yong Kwan; Park, Sung Chan; Ha, Jeong Sook; Huh, Junghwan; Na, Junhong; Kim, Gyu-Tae.

In: Applied Physics Letters, Vol. 95, No. 4, 043107, 11.08.2009.

Research output: Contribution to journalArticle

Kim, Daeil ; Kim, Yong Kwan ; Park, Sung Chan ; Ha, Jeong Sook ; Huh, Junghwan ; Na, Junhong ; Kim, Gyu-Tae. / Photoconductance of aligned SnO2 nanowire field effect transistors. In: Applied Physics Letters. 2009 ; Vol. 95, No. 4.
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