Photoconductance of aligned SnO2 nanowire field effect transistors

Daeil Kim, Yong Kwan Kim, Sung Chan Park, Jeong Sook Ha, Junghwan Huh, Junhong Na, Gyu-Tae Kim

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We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼ 107 at the gate voltage Vg =-40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity.

Original languageEnglish
Article number043107
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2009 Aug 11


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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